Integrated circuit ( 5 ) includes substrate ( 10 ) with surface ( 20 ) and structure ( 30 ) including base levels ( 45. i, 45 .( i +1)), terminating cells ( 48, 49 ), and block ( 40 ) of standard cells arranged in rows ( 42. i, 42 .( i +1)), and another type of block ( 60 ) outside block ( 40 ). Standard cells at at least two edges of block ( 40 ) have the following protections: (1) block ( 60 ) has strip of separation ( 41. j ) having at least a minimum width from the edges of block ( 40 ), and protected by one of the following: (2) terminating cells ( 48, 49 ) reduce context effect and some terminating cells ( 48 ) are placed at i least one end of rows ( 42. i, 42 .( i +1)) of standard cells within first-named block ( 40 ), and (3) the terminating cells ( 48, 49 ) reduce context effect and some terminating cells ( 49 ) are at one end of a column of standard cells within block ( 40 ). Other structures, devices, and processes are also disclosed.

Integrated circuits and processes for protection of standard cell performance from context effects

We have conducted a study of context-dependent variability for cells in a 45nm library, including both lithography and
stress effects, using the Cadence Litho Electrical Analyzer (LEA) software. Here, we present sample data and address a
number of questions that arise in such simulations. These questions include identification of stress effects causing
context dependence, impact of the number of contexts on the results, and combining lithography-induced variations due
to overlay error with context-dependent variations. Results of such simulations can be used to drive a number of
corrective and adaptive actions, among them layout modification, cell placement restrictions, or optimal design margin
determination.

Variations in timing and leakage power of 45nm library cells due to lithography and stress effects

To address the variability challenges inherent to 45 and 32nm as early as possible, a model-based variability analysis has
been implemented to predict lithography induced electrical variability in standard cell libraries, and this analysis was
used optimize the cell layout and decrease variability by up to 40%.

Layout electrical cooptimization for increased tolerance to process variations

In this paper, we present the challenges of the realization of a large 45nm modern Media Processing SoC with multiple
design teams distributed across many countries and time zones We also describe the complex design methodology
deployed to ensure the design is "closable" in the timing and manufacturability domain
Silicon variability impacts both the physical integrity and the parametric performance of the design Lithography and
CMP can cause enough context-dependent systematic variations, requiring exhaustive lithography and CMP physical
verification and optimization of the layout
We present the physical and electrical DFM methodology at NXP We will show how NXP has developed a
manufacturing-aware design flow based on early prevention, detection and fixing using a hierarchical approach for
model-based lithography checks and model-based CMP checks, from IP level to full-chip We also present results of
variability-aware timing sign-off

Realizing a 45-nm system on chip in the age of variability

With process technologies advancing to 65nm, 45nm, and below, device timing uncertainty due to lithography and other
process variations has easily exceeded 50% and is still growing. In this paper, we present the development of a
variability methodology, its correlation with silicon and application to cell and full-chip design verification and
optimization. We describe both a methodology for variability analysis of standard cells and a full-chip screening
methodology to identify potential chip variability excursions. This methodology relies on model-based analysis and
integrates with our existing design-to-manufacturing flow. Based on silicon measurement data of one of our 65nm cell
libraries, this methodology has achieved significant improvement in accuracy of estimating timing variations compared to a traditional rule-based method.

Foundry verification of IP and incoming designs for manufacturing variability

The impact of lithography-induced systematic variations on the parametric behavior of cells and chips designed on a TI
65nm process has been studied using software tools for silicon contour prediction, and design analysis from contours.
Using model-based litho and etch simulation at different process conditions, contours were generated for the poly and
active layers of standard cells in multiple contexts. Next, the extracted transistor-level SPICE netlists (with annotated
changes in CD) were simulated for cell delay and leakage. The silicon contours predicted by the model-based litho tools
were validated by comparing CDs of the simulated contours with SEM images. A comparative analysis of standard cells
with relaxed design rules and restricted pitch design rules showed that restrictive design rules help reduce the variation
from instance to instance of a given cell by as much as 15%, but at the expense of an area penalty. A full-chip variability
analysis flow, including model-based lithography and etch simulation, captures the systematic variability effects on
timing-critical paths and cells and allows for comparison of the variability of different cells and paths in the context of a
real design.

Context analysis and validation of lithography induced systematic variations in 65nm designs

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Context analysis and validation of lithography induced systematic variations in 65nm designs