The layered two-dimensional (2D) materials, e.g., the well-known graphene, transition metal dichalcogenides, and topological insulators, have attracted great interest of researchers from fundamental research as well as industries owing to their intriguing properties in a number of aspects. In practical applications, the efficient modification of the features of 2D materials is compelling and essential to achieve desired functionalities. Ion implantation has been successfully applied to synthesize graphene. The most exotic advantage of ion beam technology is that it offers distinct options of energetic beams, which has recently shown the unique capability to modify and tailor the properties of versatile 2D materials. To name a few, the energetic ion beams could implement the surface morphology or layer-to-layer structural engineering of 2D materials. At the microcosmic level, the introduction of ion beam induced defects and intentional doping of specific ions are the basis of tailoring properties of 2D mat...

Ion beam modification of two-dimensional materials: Characterization, properties, and applications

Elastocapillary phenomena involving elastic deformation of solid structures coupled with capillary effects of liquid droplets/films can be observed in a diversity of fields, e.g., biology and microelectromechanical systems (MEMS). Understanding the physical mechanisms underlying these phenomena is of great interest for the design of new materials and devices by utilizing the effects of surface tension at micro and nano scales. In this paper, some recent developments in the investigations on elastocapillary phenomena are briefly reviewed. Especially, we consider the deformation, adhesion, self-assembly, buckling and wrinkling of materials and devices induced by surface tensions or capillary forces. The main attention is paid to the experimental results of these phenomena and the theoretical analysis methods based on continuum mechanics. Additionally, the applications of these studies in the fields of MEMS, micro/nanometrology, and biomimetic design of advanced materials and devices are discussed.

On elastocapillarity: A review

Multi-layer graphene obtained by high temperature carbon implantation into nickel films

Few-layer graphene has been prepared on 300 nm-thick Ni films by C 2 –C 6 cluster ion implantation at 20 keV/cluster. Raman spectroscopy reveals significant influence of the number of atoms in the cluster, the implantation dose, and thermal treatment on the structure of the graphene layers. In particular, the graphene samples exhibit a sharp G peak at 1584 cm −1 and 2D peaks at 2711–2717 cm −1 . The I G / I 2D ratios higher than 1.70 and I G / I D ratio as high as 1.95 confirm that graphene sheets with low density of defects have been synthesized with much improved quality by ion implantation with larger clusters of C 4 –C 6 .

Raman spectroscopy of few-layer graphene prepared by C2–C6 cluster ion implantation

Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H–SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C1 and C6-cluster ions implanted into 6H–SiC substrates, some of the Si–C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C.

Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

We present few-layer graphene synthesis by negative carbon cluster ion implantation with C1, C2, and C4 at energies below 20 keV. The small C-clusters were produced by a source of negative ion by cesium sputtering with medium beam current. We show that the nonlinear effect in cluster-induced damage is favorable for graphene precipitation compared with monomer carbon ions. The nonlinear damage effect in cluster ion implantation shows positive impact on disorder reduction, film uniformity, and the surface smoothness in graphene synthesis.

Nonlinear damage effect in graphene synthesis by C-cluster ion implantation

We developed a cluster ion beam system that produces negative cluster beams of C1–C10 with ion current of 4.5 nA-50 μA at extraction voltages ranging from 6 to 20 kV. The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder. Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV/atom without deceleration. Small carbon clusters C2 and C4 were implanted into Ni/SiO2/Si substrates and following post-thermal treatment graphene was obtained. Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2–3 layers of graphene. The Raman data reveals clear effect of nonlinear cluster-surface interaction in ion beam synthesis of two-dimensional nanomaterials.

/pdf/an-ultralow-energy-negative-cluster-ion-beam-system-and-its-51zfccujuq.pdf

An ultralow-energy negative cluster ion beam system and its application in preparation of few-layer graphene

The invention provides a method for preparing an ultrathin carbon film. A small carbon cluster negative ion beam is produced by sputtering a graphite target with cesium ions, and the ultrathin carbon film is formed by scanning and depositing the small carbon cluster negative ion beam on the surface of a base material through a magnetic retarding field in proper vacuum conditions. The device mainly comprises an ion source, a scanner, a deposition target chamber and a vacuum system, wherein the ion source, the scanner and the deposition target chamber are successively connected and are in the vacuum system. The energy of the carbon cluster negative ion beam produced by the ion source is reduced from ten-odd of KeV to tens or hundreds of eV, and the ultrathin carbon film with uniform thickness is formed on the substrate through scanning. In the invention, the advantages of low energy and accurate and controllable dosage of the low-energy cluster negative ion beam are utilized, and the ultrathin carbon film is prepared by using the direct deposition method.

Method for preparing ultrathin carbon film by using carbon cluster ion beam

Field ionizing particle generator

We develop a miniaturized chamber installed on a tandetron accelerator into which negative ions of small carbon clusters are transported. Negative clusters C−1-C−10 are obtained with beam currents of 1–104 nA at energies of 10–20 keV. C−2 beams of 0.2 μA are used to directly deposit carbon films on SiO2/Si substrates. Formation of ultrathin carbon films are demonstrated by Raman scattering, which reveals the evolution of the graphitic peak (1550 cm−2) with deposition time.

Ultrathin Carbon Films Prepared by Negative Cluster-Beam Technology

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