PROBLEM TO BE SOLVED: To provide a rotation applying method for forming a coated film in a wider range while reducing a dropping amount of coating liquid SOLUTION: The rotation applying apparatus 100 is configured so as to drop the coating liquid onto a center part of a substrate by a first dropping amount with a coating liquid supplying part while rotating the substrate around the center part of the substrate with a first rotation number by the use of a rotating driving source, after dropping the coating liquid by the first dropping amount, drop the coating liquid onto the center part of the substrate by a second dropping amount with the coating liquid supplying part while rotating the substrate with a second rotation number smaller than the first rotation number by the use of the rotating drive source and, after dropping the coating liquid by the second dropping amount, rotate the substrate with a third rotation number for determining a film thickness of the coating liquid by the use of the rotating drive source Therein, the first rotation number is such a rotation number that the coating liquid of the first dropping amount does not spread uniformly over the substrate owing to air resistance COPYRIGHT: (C)2009,JPO&INPIT

Rotation applying method and rotation applying apparatus

PURPOSE:To eliminate or reduce the thickness irregularity of a membrane in forming the membrane to a large object to be coated and to enhance yield by lowering the number of rotations of the object to be coated on and after a time when the thickness of the membrane is markedly reduced by the evaporation of a solvent after the rotation of the object to be coated is started. CONSTITUTION:An object 11 to be coated is fixed on a chuck 12 and a coating solution 14 is dripped from a nozzle 15. Subsequently, a motor 13 is driven to pre-spin the object 11 to be coated and the object 11 to be coated is continuously rotated at high speed up to the number NH of rotations. After the object 11 to be coated is rotated constant in this number NH of rotations for predetermined time, the rotational speed thereof is lowered to low speed NL at the time t1 when the evaporation of a solvent begins to dominate film thickness. When the number of rotations is lowered at the time t1 when the reduction of film thickness due to the evaporation of the solvent begins to become marked, turbulent flow is made hard to generate in the vicinity of the surface of the object to be coated. Therefore, the generation of difference in film thickness between the outer peripheral part and center part of the object 11 to be coated is suppressed and a membrane having almost uniform thickness can be formed to the entire surface of the object to be coated.

Application of coating solution

PURPOSE:To relatively slowly form a photoresist and to widen it uniformly on the whole surface of a silicon wafer by dropping the photoresist on the wafer, and then providing the step of rotating it until it arrives at the speed of the wafer for providing the thickness of the photoresist to be of a target CONSTITUTION:A time T1 is a time of dropping a photoresist on a silicon wafer, a time T3 is a time for providing the step of rotating it until it arrives at the speed of the wafer to be of a target, and a time T2 is a time of rotating at the speed to be of a target The time T3 for providing the step of rotating it is provided to widen the photoresist dropped on the wafer on the whole surface of the wafer while slowly drying it, ie, slowly raising its viscosity As a result, the thickness difference between the photoresist film formed at the center on the wafer and the photoresist film formed on the periphery of the wafer is reduced

Formation of photoresist film

PROBLEM TO BE SOLVED: To provide a coating method of a protective film capable of coating a processing surface of a wafer with a flat protective film and capable of reducing the amount of disposed liquid resin.SOLUTION: A liquid resin dropping process for dropping a prescribed amount of liquid resin 30 onto a center region of processing surface Wa of a wafer W, a liquid resin diffusion process for diffusing the liquid resin 30 to the whole surface of the processing surface Wa of the wafer W to apply the protective film 30a by rotating a spinner table 21 at a first rotation speed for a first predetermined time and a finishing process for flattening the protective film 30a applied onto the processing surface Wa of the wafer W to finish the protective film into the protective film 30b by rotating the spinner table 21 at a second rotation speed higher than the first rotation speed for a second predetermined time are performed and, thereby, the protective film 31 having preferable flatness is applied onto the processing surface Wa of the wafer W and the amount of disposed liquid resin 30 can be reduced.

Coating method of protective film

PURPOSE:To coat resist over the entire surface of a coated surface to a film thickness approximately uniform by a method wherein the coated surface is turned at a fixed speed of rotation, after the surface is turned at a speed of rotation larger than the fixed one corresponding to a desired film thickness. CONSTITUTION:After a wafer 4 is chucked by a vacuum chuck 2, the suitable amount of resist 5 is dripped. Besides, the fixed speed of rotation corresponding to a desired film thickness is set at 4,000r.p.m. First, the resist 5 is expanded over the entire surface by turning the coated surface 3 at a speed of rotation lower than the fixed one, e.g. 500r.p.m. till t1' seconds. Therefore, it is turned at a speed of rotation larger than the fixed one, e.g. 6,500r.p.m. till t2' seconds. Meanwhile, unnecesary resists 4 are discarded from the surface 3 of the wafer 4 in a short time. Afterwards, it is turned at the fixed speed of rotation corresponding to a uniform desired film thickness, e.g. 4,000r.p.m. till t3' seconds, and accordingly a desired resist film 6 is obtained.

Resist coating method

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Resist coating method