An electron beam exposure apparatus comprising: column 1 for irradiating an electron beam to wafer 10 serving as a sample; sample chamber 3 having vacuum pump 40 as a vacuum exhaustion unit for controlling the internal unit to a vacuum atmosphere; stage 4A arranged in the sample chamber 3 for holding and moving the wafer 10; and first mounting 5A for elastically supporting the column 1 with respect to the sample chamber 3.

Electron beam exposure apparatus

An electron beam drawing apparatus has a sample chamber having a bottom plate, a side wall, and a top plate. Pillar members are disposed at four corners of the sample chamber and a frame is fixed to the pillar members. A plurality of supporting apparatuses for positioning a column mounted on the top plate to the frame are arranged around the column, thereby suppressing vibration of the column at the time of movement of a stage.

Electron beam drawing apparatus

A charged particle device includes a cylindrical column ( 102 ), a charged particle beam optical system disposed in the column; a sample stage ( 103 ) disposed on the column, and a support device ( 211, 212 ) supporting the column. The support device includes a simply supported structure that simply supports the column at a plurality of support points set along an axial line direction of the column. The support points for the column are disposed at positions corresponding to the positions of nodes of vibration of the column. In this way, the rigidity of the column can be increased without increasing the weight of the column itself, whereby vibrations acting on the column can be decreased.

Charged particle device

PROBLEM TO BE SOLVED: To achieve image collation with a high recognition rate and a low erroneous recognition rate in an image collation and evaluation apparatus for collating the data of similar images, and for calculating relative deviation values. SOLUTION: Similarity and relative deviation values are calculated on the basis of a first image collation method whose image collation tolerance is narrow, and when the similarity is less than a predetermined threshold, the relative deviation values are recalculated on the basis of the second image collation method whose collation tolerance is wide. COPYRIGHT: (C)2007,JPO&INPIT

Image collation and evaluation apparatus, image collation and evaluation method, and program

PURPOSE: To shorten the aligning wait time for an electron beam and enhance the through-put of an electron beam plotting device by selecting the data in compliance with the frequency or time of implementation when repetitive calculations are to be made including the time or the period of time, and conducting the calculation of the latest data in priority and with a heightened calculating frequency. CONSTITUTION: A data selecting means 7 of an electron plotting device reads the deflecting position data and its time data accommodated in a memory means 6 and enters the deflection data in a calculator circuit 8, followed by a corrective calculation, and the result from calculation is fed to an adder circuit 10. The adder circuit 10 adds the calculating result to the offset component of a holding means 9, and another adder circuit 11 adds the result to the aux. deflection data so that a magnetic response is corrected. A selecting means 7 judges that the magnetic response has come into the convergence region on the basis of the implementation time of the repetitive calculations. After an appropriate time, the old deflection data in the memory means 6 is sent to the calculating means 8 bit by bit. The calculating means 8 selects the data according to the frequency or time of implementation at the time of calculation, and calculation of the latest data is given a priority and performed with a heightened calculating frequency, and the calculating frequency for old data is sunk. In case the deflection amount is below the specified value, corrective calculation is omitted.

Electron-beam plotting device

PURPOSE:To prevent a mark position from being misrecognized by delaying the scanning start of a beam by a time corresponding to the response delay of a mark signal amplifier. CONSTITUTION:When a CPU 10 sends a start instruction, a timer 11 generates a driving signal while the beam 14 is deflected and projected 12 on a point A on a wafer 19, and operation is performed for the time (Tsec) corresponding to the response delay of the mark signal amplifier 17. An end signal is generated on said operation, the beam 14 begins to be scanned as specified, and reflected electrons from the wafer 19 are detected 18 and amplified 17. Then while the beam 14 stops at the point A for Tsec, the mark signal returns to its correct level, one mark edge (n) per one beam scan is detected 16, and beam coordinate data outputted by a beam deflecting signal generation part 12 are stored in a memory 15. Similar operation is carried out by the specific number of scans and then the CPU 10 reads the contents of the memory 15. Those data are one edge data per one beam scan and the CPU 10 sends data with a shift in scanning start point to the generation part 12 and the mark detection is carried on.

Mark position detecting method

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Electron-beam plotting device

Mark position detecting method