This paper discuses the design, materials, fabrication and measurements of a novel integrated decoupling capacitor for MCM-L-based substrates. Based on modeling using the SLA Roadmap, it has been estimated that 13-72 nF/cm/sup 2/ of specific decoupling capacitance will be required for the next decade. The capacitor in this paper addresses this need. The fabrication of the capacitor has been achieved using filled polymer materials in thin film form, with via diameters of 100 um and below, through photodefinable processes. Dielectric constant as high as 65 with loss tangent below 0.05 and specific capacitance of 22 nF/cm/sup 2/ have been achieved. The scattering parameters were measured up to 20 GHz using a network analyzer for various capacitor structures to study input impedance and scaling of the devices. Input impedance of the capacitor is found to be low in the GHz range. The polymer-filled materials and capacitor structures are also scalable to a variety of sizes and values.

A novel integrated decoupling capacitor for MCM-L technology

Tantalum oxide thin film capacitors were fabricated on metallized polyimide sheet substrates and tested. It was found that the substrates' surface topography has a strong influence on the electrical properties and yields of the thin film capacitors. The leakage current density and breakdown field strength of the capacitors are qualitatively correlated to the amount and degree of surface irregularities on the substrates, which were analyzed using scanning electron microscopy (SEM), atomic force microscopy (AFM), and profilometry. It was demonstrated that Benzocyclobutene (BCB) can be used to planarize the surface irregularities and to improve the capacitor yield and performance. The importance of choosing the right substrate materials for thin film capacitor fabrication is also discussed.

Study of tantalum oxide thin film capacitors on metallized polymer sheets for advanced packaging applications

Ferroelectrics such as BaTiO 3 , Pb x Zr 1-x TiO 3 and Ba x Sr 1-x TiO 3 can exhibit dielectric constants up to three orders of magnitude higher than those of paraelectric materials such as SiO y Al 2 O 3 , Ta 2 O 5 , and BCB. However, the dielectric properties of ferroelectrics are typically a stronger function of temperature, frequency, film thickness, and bias resulting in significant nonlinearities in their performance. Also, the dielectric constant of some ferroelectrics degrades with time. As a result, paraelectrics are more suitable for high-tolerance applications such as filtering, timing, RF/wireless, and A/D where constant, predicable capacitance is required. Ferroelectrics would be preferred for decoupling due to their higher dielectric constants and due to the fact that less tolerance is necessary; the capacitor only needs to meet a certain minimum value. Either might be used for termination as long as footprint requirements can be met. Annealing temperatures for high-k ferroelectrics are currently excessive for applications on organic boards which complicate their integration into these substrates. Since capacitor values on a single board might span up to six orders of magnitude, it may be necessary to use more than one dielectric material to restrict the capacitor footprints to an acceptably smaller range. BCB and SiO 2 may be more useful for these low values and may be already present on the substrate as an interlayer dielectric.

Comparison of paraelectric and ferroelectric materials for applications as dielectrics in thin film integrated capacitors

A novel technique of fabricating MCM-L compatible integrated resistors on large area substrates is presented. Electroless plated Ni-P/Ni-W-P alloys are used to achieve resistivity values in the range of 5-50 ohm/square and absolute temperature coefficient of resistivity below 50 ppm//spl deg/C, which is sufficient to satisfy many resistor application needs. Fine line structures (<50 /spl mu/m linewidth) are achieved by a three step process: electroless plating a thin (100-200 /spl Aring/) seed layer on patterned photoresist; lift-off of regions of the seed layer by dissolution of the photoresist; and electroless plating of the resultant structures in the seed layer to the desired thickness to achieve a specific sheet resistance. Improvements in seeding uniformity of the initial blanket seed layer were achieved by use of an organosilane-based surface treatment prior to deposition, as well as tight control of temperature across the substrate during plating. A test vehicle consisting of various resistor structures to evaluate electrical and mechanical properties, processing conditions, and reliability was designed and fabricated. Electrical properties, (including scattering parameters (S-parameters) of the resistor structures up to 20 GHz), temperature coefficient of resistivity (TCR), and power handling capabilities of the resistor structures on different substrates are presented.

Electroless Ni-P/Ni-W-P thin-film resistors for MCM-L based technologies

Thin film tantalum oxide capacitors were fabricated on flexible polyimide substrates and characterized. The capacitance and dielectric constant were found to be independent of frequency from 100 MHz-1 GHz. The leakage current-voltage (I-V) characteristics of the virgin tantalum oxide capacitors were erratic. Both current-induced and temperature-induced annealing effects on virgin capacitors were observed. It was found that the defects of the capacitors depend, not only on the tantalum oxide dielectric, but also on the underlying electrode. Copper particulates embedded in the bottom electrode were the primary cause of electrical shorts. The conduction mechanism was found to be ionic. The ionic conduction activation energies are linearly dependent on the applied electric field, ranging from 0.47 eV for an electric field of 0.13 MV/cm to 0.38 eV for 0.73 MV/cm.

Characterization of thin film tantalum oxide capacitors on polyimide substrates

The authors have developed a tantalum oxide thin-film capacitor that is compatible with die-bonding by gold-silicon solder and hermetic glass-sealed packaging. Its lower electrode is a metal plate, and the upper one is a metal thin film. A Ta/sub 2/O/sub 5/ thin-film capacitor that uses a rolled tape of iron-42% nickel alloy as the metal plate and aluminium as the metal thin film is described. This capacitor can withstand a temperature of 500 degrees C for more than ten minutes. Its thermal coefficient of capacitance is less than 400 p.p.m./ degrees C in the range from 25 degrees C to 150 degrees C. The dependence of capacitance on frequency is very small in the range from 1 MHz to 1 GHz. The dielectric loss tangent is less than 0.5% at 1 MHz. The authors compared with Ta/sub 2/O/sub 5/ thin-film capacitor's performance with that of a barium-titanate-based single-layer chip capacitor by measuring the gain of an amplifier composed of an amplifier IC chip and a capacitor in a leadless chip carrier package. Incorporating Ta/sub 2/O/sub 5/ thin-film capacitors into the IC package was confirmed to be a more effective decoupling technique, particularly above than 100 Mhz. >

http://ieeexplore.ieee.org/iel2/833/2539/00076128.pdf

Tantalum oxide thin-film capacitor suitable for being incorporated into an integrated circuit package

Popular Tasks used by Researchers

How can I help with your research?

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

We encountered an error while loading the panel. Please try refreshing the page.

Something went wrong

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

Anyone with the link can view this chat. You can switch it back to private anytime.

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

S. Yamanaka

Author Tools

Chat about Author

Papers

Tantalum oxide thin-film capacitor suitable for being incorporated into an integrated circuit package