Microwave photonics and optics-based analog links are technologies that are being developed for a growing number of applications. Photodetectors that operate at high power levels are key components. Additionally, it is important for many of these applications that the photodiodes have millimeter-wave bandwidths and highly linear response. This paper reviews the performance of modified uni-traveling carrier photodiodes with respect to these characteristics.

High-power, high-linearity photodiodes

Over the past ten years, DARPA has made significant investments toward advancing the field of microwave photonics. This paper reviews DARPA-funded progress in this subject over the past decade. DARPA-funded research has advanced the state-of-the-art for microwave-photonic components, including low noise laser diodes, electrooptic modulators and high power photodiodes, as well as microwave photonic link configurations, including photonic downconversion, reconfigurable optical filters and optical phase-locked loops. These investments have yielded dramatic improvements in spurious-free dynamic range (SFDR). Measured performance includes SFDRs exceeding 115 dB · Hz2/3 at 16 GHz using broadband externally modulated links; exceeding 120 dB · Hz2/3 at 10 GHz using sub-octave electrooptic modulators; near 135 dB · Hz2/3 at 100 MHz using optical phased-locked loops as linear phase demodulators; and exceeding 125 dB · Hz2/3 at 5 GHz using optical filtering, downconversion and predistortion compensation.

Microwave Photonics Programs at DARPA

Back-illuminated flip-chip-bonded charge-compensated modified uni-traveling-carrier photodiodes (PDs) with bandwidths in excess of 110 GHz are demonstrated. PDs with 10- and 6-μm-diameters deliver RF output power levels as high as 9.6 dBm at 100 GHz and 7.8 dBm at 110 GHz, respectively. An analytical model based on parameter extraction from S-parameter fitting was used to assess the bandwidth limiting factors.

High-Power Flip-Chip Bonded Photodiode With 110 GHz Bandwidth

We report the demonstration of high-power and low relative intensity noise (RIN) directly modulated distributed feedback lasers at 1.55 μm. We have developed a structure with asymmetrical cladding to reduce internal losses due to the p-doped upper cladding. We obtain an output power of 140 mW at 550 mA and an RIN below -157 dB/Hz in the 0.1-20 GHz range along with a high side-mode suppression ratio (>;55 dB). The modulation bandwidth was larger than 7 GHz. The characteristics of these lasers, namely a high electrical to optical conversion efficiency (0.340 W/A at 350 mA), low noise, high power (98 mW at 350 mA), and linearity, make them the perfect candidates for high gain, high dynamic directly modulated analog links.

High-Power, Low RIN 1.55- $\mu{\rm m}$ Directly Modulated DFB Lasers for Analog Signal Transmission

High-performance analog photonic links are discussed and the prevalent modulation formats are highlighted. Because of
its multi-octave and millimeter-wave potential, special attention is given to intensity modulation with direct detection
(IMDD) employing an external Mach-Zehnder modulator (MZM). The theory for IMDD is reviewed and some
experimental results are discussed. Two limiting factors in multi-octave IMDD implementations are quantified. The
MZM bias requirements in order to remain third-order limited are shown to be very stringent in high-performance links.
Photodiode nonlinearities, perhaps the most inhibiting factor in present-day wideband analog photonics, are cast in terms
of output intercept points and tied to the IMDD link performance.

Wideband analog photonic links: some performance limits and considerations for multi-octave implementations

We have fabricated and characterized two high-power high-linearity uni-traveling-carrier photodiode (UTC-PD) structures. The UTC performances are compared regarding their respective collector design. A -3-dB bandwidth improvement (from 16-25 GHz to 19-32 GHz) is achieved when the collector layer thickness is increased (from 250 to 350 nm, respectively). The bandwidth improvement for large photocurrent is at the origin of a ldquosupra-linearityrdquo effect. Photocurrent saturation effects are investigated and -1-dB compression current measurements at 20 GHz show saturation currents as high as 70 mA at -4 V. We also report third-order intermodulation distortion measurements at 20 GHz. The ldquosupra-linearityrdquo effect enhances the PD linearity with increased photocurrent, leading to a record third-order intercept point of 35 dBm at 40 mA.

High-Power High-Linearity Uni-Traveling-Carrier Photodiodes for Analog Photonic Links

We report two uni-traveling-carrier photodiode (PD) structures, for high-power and high-linearity applications. Using a thick collection layer (500 nm), the fabricated 25-m-diameter PDs achieve a 3-dB bandwidth up to 29 GHz, and a maximum dissipated heat power of about 480 mW, simultaneously. A new collector design with a nonuniform doping profile is proposed to better relax the space charge effect. Its performances are compared to a uniformly doped collector layer. Saturation currents and third-order intermodulation distortion measurements at 20 GHz confirm the advantage of the new collector design for high-power and high-linearity performances: 1-dB saturation current as high as 120 mA and a third-order intercept point in excess of 35 dBm at 70 mA are recorded.

High-Performance Uni-Traveling-Carrier Photodiodes With a New Collector Design

We compare two uni-traveling-carrier photodiodes for high power applications. Saturation current is increased from 62 mA to 90 mA at 20 GHz due to improved series-resistance and heat power dissipation. The associated 3 -dB bandwidth is shown to increase simultaneously from 30 GHz at 40 mA to 32 GHz at 70 mA.

InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability

High responsivity backside-illuminated uni-traveling-carrier photodiodes (PDs) with a 1.2-mum-thick p-doped absorption layer are demonstrated. The fabricated PDs achieve simultaneously high speed, high responsivity, and good linearity under high-power operation. The measured responsivity at 1.55 mum is larger than 0.83 A/W at low photocurrent and increases up to 1 A/W at 75 mA. The measured bandwidth increases from 9 GHz at 1 mA up to 24 and 29 GHz at 50 mA, for 25- and 20-mum-diameter PDs, respectively. Good linearity is demonstrated with a third-order intercept point of 30 dBm at 10 GHz and 50 mA.

Thick Absorption Layer Uni-Traveling-Carrier Photodiodes With High Responsivity, High Speed, and High Saturation Power

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Papers

High-Power High-Linearity Uni-Traveling-Carrier Photodiodes for Analog Photonic Links

High-Performance Uni-Traveling-Carrier Photodiodes With a New Collector Design

InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability

Thick Absorption Layer Uni-Traveling-Carrier Photodiodes With High Responsivity, High Speed, and High Saturation Power