Pinghui S. Yeh
National Taiwan University of Science and Technology
32 Papers
120 Citations
Pinghui S. Yeh is an academic researcher from National Taiwan University of Science and Technology. The author has contributed to research in topics: Fiber laser & Light-emitting diode. The author has an hindex of 11, co-authored 31 publications. Previous affiliations of Pinghui S. Yeh include National Sun Yat-sen University & University of Maryland, College Park.
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Papers
110 W fibre laser
Vince Dominic,Stuart MacCormack,Robert G. Waarts,Steve Sanders,S. Bicknese,R. Dohle,E. Wolak,Pinghui S. Yeh,E. Zucker +8 more
TL;DR: In this paper, a Yb-doped double-clad fiber laser with a record average power output of >110 W CW in a single spatial mode beam was demonstrated and the conversion efficiency was /spl sim/58% with respect to the incident pump power.
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110 W fiber laser
Vince Dominic,Stuart MacCormack,Rob Waarts,Steve Sanders,S. Bicknese,R. Dohle,E. Wolak,Pinghui S. Yeh,E. Zucker +8 more
- 28 May 1999
TL;DR: In this article, a Yb-doped double-clad fiber laser with record average power output of >110 W cw in a single spatial mode beam was demonstrated and the conversion efficiency was /spl sim/58% with respect to the incident pump power.
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High-Performance InGaN p-i-n Photodetectors Using LED Structure and Surface Texturing
Yi-Ting Huang,Pinghui S. Yeh,Yen-Hsiang Huang,Yu Ting Chen,Chih-Wei Huang,Cong Jun Lin,Wenchang Yeh +6 more
TL;DR: In this paper, high performance InGaN-based p-i-n photodetectors were fabricated using a typical light-emitting diode (LED) epitaxial structure and surface texturing.
20
High-power high-gain monolithically integrated preamplifier/power amplifier
TL;DR: In this paper, a monolithic integration of an index-guided single lateral mode optical preamplifier with a power tapered semiconductor laser amplifier is reported, with a coupled input power of only 6 mW, 4.5W of output power is obtained at 810nm.
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GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer
Pinghui S. Yeh,Meng-Chun Yu,Jia-Huan Lin,Ching-Chin Huang,Yen-Chao Liao,Da-Wei Lin,Jia-Rong Fan,Hao-Chung Kuo +7 more
TL;DR: In this paper, a GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time.
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