Ping-Chuan Chang
Kun Shan University
47 Papers
407 Citations
Ping-Chuan Chang is an academic researcher from Kun Shan University. The author has contributed to research in topics: Schottky barrier & Dark current. The author has an hindex of 14, co-authored 46 publications. Previous affiliations of Ping-Chuan Chang include Cheng Shiu University & National Cheng Kung University.
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Papers
Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures
Y. D. Jhou,Chin-Hsing Chen,Ricky W. Chuang,Shoou-Jinn Chang,Yan-Kuin Su,Ping-Chuan Chang,Po-Chang Chen,Hung Hung,S. M. Wang,C. L. Yu +9 more
TL;DR: In this article, a InGaN/GaN multiple quantum well structure was employed for dual functions of optoelectronics devices exhibiting photodetector properties in reverse bias, while at the same time preserving the distinct identities of LED in forward bias.
43
GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg $_{\rm x}$ N $_{\rm y}$ –GaN Buffer Layer
Soon-Jyh Chang,K. H. Lee,Ping-Chuan Chang,Yi Ching Wang,C. L. Yu,Cheng-Huang Kuo,San-Lein Wu +6 more
TL;DR: In this paper, a GaN-based UV photodetectors with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair MgxNy-GaN buffer buffer layer were both fabricated.
39
AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts
TL;DR: In this paper, photo-chemical vapour deposition (photo-CVD) annealed Ni/Au semi-transparent contacts were fabricated and the transmittances of Ni-Au films increased while the photodetector dark currents became significantly lower after annealing.
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Effect of sintering conditions on characteristics of PbTiO3–PbZrO3–Pb(Mg1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3
TL;DR: In this paper, the effects of sintering time and packing powders on the properties of Pb[(Zr 0.49 Ti 0.51 ) 0.20 (Zn 1/3 Nb 2/3 )0.06 ]O 3, 0.47≤ y ≤ 0.57, with composition close to the morphotropic phase boundary (MPB) is studied.
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GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with Ir ∕ Pt Contact Electrodes
TL;DR: In this article, the Schottky barrier heights at the non-annealed and 5008C-nanealed Ir/ZnO interfaces were around 0.65 and 0.78 eV, respectively.