http://files.janapv.webnode.cz/200000097-8a03f8afdf/ex_bias_nano.pdf

Exchange bias in nanostructures

Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself.

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

Ordered magnetic nanostructures: fabrication and properties

The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just over a decade ago has enabled the development of new classes of magnetically engineered magnetic thin-film materials suitable for advanced magnetic sensors and magnetic random access memories. Magnetic sensors based on spin-valve giant magnetoresistive (GMR) sandwiches with artificial antiferromagnetic reference layers have resulted in enormous increases in the storage capacity of magnetic hard disk drives. The unique properties of magnetic tunnel junction (MTJ) devices has led to the development of an advanced high performance nonvolatile magnet random access memory with density approaching that of dynamic random-access memory (RAM) and read-write speeds comparable to static RAM. Both GMR and MTJ devices are examples of spintronic materials in which the flow of spin-polarized electrons is manipulated by controlling, via magnetic fields, the orientation of magnetic moments in inhomogeneous magnetic thin film systems. More complex devices, including three-terminal hot electron magnetic tunnel transistors, suggest that there are many other applications of spintronic materials.

Magnetically engineered spintronic sensors and memory

An overview is given of the material properties of exchange-biased spin-valves. More specifically, we discuss the microstructure and magnetic properties of these materials as relevant for (future) industrial application in magnetoresistive read heads for rigid disk and tape recording and Magnetic Random Access Memory (MRAM) devices.

Exchange-biased spin-valves for magnetic storage

This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.

Spin-valve RAM cell

The authors propose a cost-effective approach to reduce write track widths down to the sub-micron range. Thin-film heads with staggered pole tips, such that the track width is defined by the overlap of pole tips, have been fabricated with processes similar to the conventional thin-film head process. Both the transverse and the longitudinal configurations have been examined. Heads of both configurations have worked well, achieving satisfactory overwrite performance and track definition. Narrow track write heads capable of writing transitions as narrow as 0.7 mu m have been demonstrated. such sub-micron write heads hold potential for achieving high track densities in conjunction with magnetoresistive read heads. >

Thin film head with staggered pole tips

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Spin-valve RAM cell

Thin film head with staggered pole tips