A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×1013, and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and a haze level of the surface (3) is not more than 5 ppm.

Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

PROBLEM TO BE SOLVED: To provide a group III nitride electronic device whose breakdown voltage can be increased. SOLUTION: Group III nitride electronic devices 31, 41, and 51 each has a semiinsulating group III nitride substrate 32 and a group III nitride laminate 34 provided on the substrate 32. The laminate 34 includes semiinsulating group III nitride epitaxial layers 35 and 36. The laminate 34 includes a gallium nitride-based semiconductor layer 37 provided between the semiinsulating group III nitride epitaxial layers 35 and 36, and the substrate 32. An interface 33 is formed of the gallium nitride-based semiconductor layer 37 and substrate 32. The gallium nitride-based semiconductor layer 37 contains at least one of Fe, Mg, and C of concentration ≥1/10 times as large as a peak value of silicon concentration. In the group III electronic device 31, Fe, Mg, or C contained in the gallium nitride-based semiconductor layer 37 reduces carriers from silicon piled up on the interface. COPYRIGHT: (C)2009,JPO&INPIT

Group iii nitride electronic device, laminate wafer for group iii nitride electronic device, and method of manufacturing group iii nitride electronic device

PROBLEM TO BE SOLVED: To provide a detergent composition for an HD (hard disk) substrate which exhibits excellent detergency and anti-foaming property with less COD, and to provide a method of manufacturing the HD substrate using the detergent composition. SOLUTION: The detergent composition for the HD substrate including an Ni-P content layer includes: polyacrylic acid alkali metal salt whose weight average molecular weight is 1,000-10,000 (component (a)); p-toluenesulfonic acid alkali metal salt (component (b)); water-soluble amine compound (component (c)); chelating agent (component (d)); and water (component (e)), and does not substantially includes nonionic surfactant. Within the total amount of the components (a), (b), (c) and (d), the detergent composition includes; 5-35 wt.% of the component (a); 15-50 wt.% of the component (b); 15-50 wt.% of the component (c); and 5-25 wt.% of the component (d), and a weight ratio of the component (c) and component (d) {component (c)/component (d)} is 0.8-5. COPYRIGHT: (C)2010,JPO&INPIT

Detergent composition for hard disk substrate

A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×10 14 , and the number of silicon atoms per square centimeter of the surface is not more than 3×10 13 , wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.

GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a glass hard disk substrate having improved washability against inorganic particles such as polishing materials and polishing wastes.SOLUTION: A method for manufacturing a glass hard disk substrate includes the following steps of: (1) polishing a glass substrate to be polished by using a polishing liquid composition with a pH of 1.0-4.0; (2) conveying the substrate obtained in the step (1) to a cleaning step (3) while immersing it in an acidic detergent composition A with a pH of 1.0-4.0; (3) immersing and cleaning the substrate conveyed in the step (2) by using an alkaline detergent composition B with a pH of 8.0-13.0; and (4) scrubbing and cleaning the substrate obtained in the step (3) by using an acidic detergent composition C with a pH of 1.0-4.0.

Method for manufacturing hard disk

PROBLEM TO BE SOLVED: To provide a semiconductor substrate with which the deterioration of characteristics of an epitaxial layer to be laminated can be prevented. SOLUTION: This semiconductor substrate is mirror-surface polished and has a surface of low Si density. The Si density is set such that the interface of the epitaxial layer/substrate is 8×10 cm or less, when the equitaxial layer is formed on the surface of the mirror-surface polished substrate. After the semiconductor substrate has been mirror-surface polished by the polishing material containing colloidal silica, the polishing material is removed by cleaning the substrate while pH is a range of 10.5 to 14 is maintained by an amine-based cleaning material.

Semiconductor substrate and manufacture thereof

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Semiconductor substrate and manufacture thereof