Nobuyuki Otsuka

TL;DR: In this article, a facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN), and a selective growth layer laterally grows from the inclined facet surface.

TL;DR: In this paper, the authors proposed a manufacturing method of a laser beam resonator having high reproducibility and yields by forming a separation groove where flatness on a section is excellent on an AlGaInN-based crystal substrate.

TL;DR: In this paper, a double heterostructure light-emitting diodes (LEDs) on (0001)-oriented sapphire substrate was operated at a peak emission wavelength of 339 nm with a narrow linewidth of 5.6 nm and the dependence of emission intensity on injection current suggests that nonradiative recombination was suppressed and the diffusion current for the recombination process was dominant at the injection current of over 20 mA.

TL;DR: The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first Group III source and a group V source containing nitrogen; and (2) growing an area near the interface between the first and second semiconductor layers is grown so that the density of the p-type dopant locally increases as mentioned in this paper.