A heater controller controls power supplied to a heater capable of adjusting the temperature of a placement surface such that the heater reaches a set temperature. A temperature monitor measures the power supplied in the non-ignited state where the plasma is not ignited and in the transient state where the power supplied to the heater decreases after the plasma is ignited, while the power is controlled such that the temperature of the heater becomes constant. A parameter calculator calculates a heat input amount and the thermal resistance by using the power supplied in the non-ignited state and in the transient state to perform a fitting on a calculation model for calculating the power supplied in the transient state. A set temperature calculator calculates the set temperature of the heater at which the wafer reaches the target temperature, using the heat input amount and thermal resistance.

Substrate processing apparatus, temperature control method, and temperature control program

A substrate cooling method is for, using a load-lock mechanism for controlling a pressure therein between a first pressure close to an atmospheric pressure and a second pressure in a vacuum state, cooling a substrate transferred from the second module to the first module. The method includes maintaining a pressure in the chamber to the second pressure, allowing the chamber to communicate with a second module, and loading the substrate into the chamber; locating the substrate to a cooling position close to the cooling member; exhausting the chamber such that the pressure in the chamber becomes a third pressure where a region between a surface of the cooling member and a backside of the substrate satisfies a molecular flow condition. The method further includes introducing a purge gas into the chamber to increase the pressure in the chamber to the first pressure, and cooling the substrate by the cooling member.

Substrate cooling method, substrate transfer method, and load-lock mechanism

A calibration method of an infrared camera includes setting a placing table on which a substrate is placed to different temperatures and acquiring a measurement value of radiation amount of infrared light emitted from each of multiple zones provided in a top surface of the placing table by an infrared camera at each of the temperatures; calculating, as a calibration value, a difference between a measurement value of a reference zone which is one of the zones provided with a temperature sensor and a measurement value of another one of the zones at each of the temperatures; specifying an interpolation curve indicating a variation tendency of the calibration value with respect to the measurement value of the reference zone for each of the zones; and storing parameters of the interpolation curve specified for each of the zones.

Calibration method of infrared camera and calibration system of infrared camera

In substrate processing method, a change in a voltage, which is applied to a component provided in a substrate processing apparatus configured to process a substrate, is measured and a current flowing through the component is measured A temperature of the component is obtained from a change in a resistance calculated based on the voltage and the current with reference to a conversion table in which a plurality of resistances is correlated with a plurality of temperatures A determination of whether or not abnormality has occurred in a temperature of the substrate is made based on the change in the voltage, and processing of the substrate is stopped when it is determined that the abnormality has occurred

Substrate processing method and substrate processing apparatus

The invention discloses a temperature correction method and device for a constant-temperature system, an analytical instrument and a storage medium The method comprises the following steps that: controlling the heating unit of the constant-temperature system to carry out heating, and after the temperature of the constant-temperature system achieves a current target temperature, obtaining heatingpower which is required to maintain the temperature of the constant-temperature system at the current target temperature; on the basis of a preset corresponding relationship between a heat transfer temperature difference and the heating power, obtaining the heat transfer temperature difference which corresponds to the heating power required for maintaining the current target temperature; and utilizing the heat transfer temperature difference which corresponds to the heating power required for maintaining the current target temperature to correct the current target temperature By use of the technical scheme in the embodiment of the invention, the target temperature of the constant temperature system can be corrected on the basis of the corresponding relationship between the heating power and the heat transfer temperature difference, and temperature correction accuracy is improved

Temperature correction method and device for constant-temperature system, analytical instrument and storage medium

Disclosed is a substrate processing system including a substrate processing apparatus; and a control device that controls the substrate processing apparatus. The substrate processing apparatus includes: a chamber; a placing table provided within the chamber; and heaters embedded in the placing table corresponding to division regions, respectively. The control device includes: a holding unit that holds a table for each of the division regions; a measuring unit that measures the resistance value of each of the heaters embedded in the placing table for each of the division regions; and a controller that estimates a temperature of each of the division regions corresponding to the resistance value of each of the heaters measured by the measuring unit with reference to the table for each of the division regions, and controls an electric power to be supplied to each of the heaters so that the estimated temperature becomes a target temperature.

Substrate processing system and temperature control method

A temperature control method of controlling a temperature of a semiconductor wafer mounted on a mounting table includes a supply process of supplying, in a state that a supply of a power to a heater configured to heat the mounting table is stopped or the power is maintained to be constant, a heat transfer gas into a gap between the semiconductor wafer and the mounting table; a measurement process of measuring a temperature variation of the mounting table due to heat exchange between the semiconductor wafer and the mounting table through the heat transfer gas; a calculation process of calculating a correction value based on the temperature variation of the mounting table; and a control process of starting the supply of the power and controlling the power such that the temperature of the mounting table reaches a target temperature corrected with the correction value.

Temperature control method

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Substrate processing system and temperature control method

Temperature control method