The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfet s have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-/low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn- off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn- on when the gate off-voltage is –6 V; the maximum dv / dt and di / dt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 Ω but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2% efficiency can be achieved at the switching frequency of 80 kHz and the power of 100 kW.

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

An overview over issues and findings in SiC power MOSFET reliability is given. The focus of this article is on threshold instabilities and the differences to Si power MOSFETs. Measurement techniques for the characterization of the threshold voltage instabilities are compared and discussed. Modeling of the threshold voltage instabilities based on capture–emission-time (CET) maps is a central topic. This modeling approach takes the complete gate bias/temperature history into account. It includes both gate stress polarities and is able to reproduce the short-term threshold variations during application-relevant 50-kHz bipolar ac-stress. In addition, the impact on circuit operation is discussed.

Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

The basic diode charge-control model used in SPICE is extended to include reverse recovery. The diode charge transport equations are simplified using the lumped charge concept of Linvill, and the model is demonstrated on the Saber simulator for simple inductive and resistive load circuits. The two model parameters, diode lifetime τ and diffusion transit time T M can be easily determined from a switching waveform

A simple diode model with reverse recovery

Power semiconductor devices constitute the heart of modern power electronic apparatus. They are used in power electronic converters in the form of a matrix of on-off switches, and help to convert power from ac-to-dc (rectifier), dc-to-dc (chopper), dc-to-ac (inverter), and ac-to-ac at the same (ac controller) or different frequencies (cycloconverter). The switching mode power conversion gives high efficiency, but the disadvantage is that due to the nonlinearity of switches, harmonics are generated at both the supply and load sides. The switches are not ideal, and they have conduction and turn-on and turn-off switching losses. Converters are widely used in applications such as heating and lighting controls, ac and dc power supplies, electrochemical processes, dc and ac motor drives, static VAR generation, active harmonic filtering, etc. Although the cost of power semiconductor devices in power electronic equipment may hardly exceed 20–30 percent, the total equipment cost and performance may be highly influenced by the characteristics of the devices. An engineer designing equipment must understand the devices and their characteristics thoroughly in order to design efficient, reliable, and cost-effective systems with optimum performance. It is interesting to note that the modern technology evolution in power electronics has generally followed the evolution of power semiconductor devices. The advancement of microelectronics has greatly contributed to the knowledge of power device materials, processing, fabrication, packaging, modeling, and simulation. Today’s power semiconductor devices are almost exclusively based on silicon material and can be classified as follows:

/pdf/power-semiconductor-devices-4pe39n3k1o.pdf

Power Semiconductor Devices

In recent decades, several factors such as environmental protection, fossil fuel scarcity, climate change and pollution have driven the research and development of a more clean and sustainable transport. In this context, several agencies and associations, such as the European Union H2020, the United States Council for Automotive Research (USCAR) and the United Nations Economic and Social Commission for Asia (UN ESCAP) have defined a set of quantitative and qualitative goals in terms of efficiency, reliability, power losses, power density and economical costs to be met by next generation hybrid and full electric vehicle (HEV/EV) drive systems. As a consequence, the automotive electric drives (which consists of the electric machine, power converter and their cooling systems) of future vehicles have to overcome a number of technological challenges in order to comply with the aforementioned technical objectives. In this context, this paper presents, for each component of the electric drive, a comprehensive review of the state of the art, current technologies, future trends and enabling technologies that will make possible next generation HEV/EVs.

Next generation electric drives for HEV/EV propulsion systems: Technology, trends and challenges

While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (V DC ), gate resistance (R g ) and gate-source supply voltage (V GS ) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for V GS =20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, E cr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in V GS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.

Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module

The industrial augmentation and unguided anthropogenic activities contaminate water sources in most parts of the world especially in developing countries like Pakistan. High concentration of pollutants in groundwater affects human, soil, and crop health badly. The present study was conducted to investigate groundwater quality for drinking and irrigation purposes in an industrial zone of Pakistan. A GIS tool was used to investigate the spatial distribution of different physico-chemical parameters. In this study, the average results exceeding World Health Organization (WHO) and National Environmental Quality Standards (NEQS) were found for pH 7.84, total dissolved solids (TDS) 1492 mg/L, phosphate 0.51 mg/L, dissolved oxygen (DO) 9.92% saturation, F-coli 6.48 colonies/100 mL, Na+ 366 mg/L, HCO3− 771 mg/L, sulfate 251 mg/L, chlorides 427 mg/L, total hardness (as CaCO3) 292 mg/L, electrical conductivity (EC) 2408 μS/cm, iron (Fe) 0.48 mg/L, chrome (Cr) 0.50 mg/L, arsenic (As) 0.04 mg/L, total phosphorus (TP) 0.17 mg/L, sodium adsorption ratio (SAR) 9.76 (in meq/L), residual sodium carbonate (RSC) 9.28 meq/L, % ion balance 14.4 (in meq/L), percentage sodium ion (% Na+) concentration 58.9 meq/L, and water quality index (WQI) 69.0. The trend of cations and anions were (in meq/L) Na > Mg > Ca > K and HCO3 > Cl > CO3 > SO4 respectively. Although the results of the present study showed poor conditions of the groundwater for drinking as WQI but and irrigation purposes as SAR, it needs to improve some more conditions for the provision of safe drinking water and irrigation water quality.

https://www.mdpi.com/2073-4441/10/10/1321/pdf

Evaluation of Groundwater Quality in the Vicinity of Khurrianwala Industrial Zone, Pakistan

In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ, and blocking voltage of 3.5 kV at 300 K. Compared to Si-IGBT, a significant lower leakage current for the SiC MOSFET is obtained with varying temperature from 300 K to 400 K. SiC MOSFET offers 7.5 times lower switching losses compared to Si-IGBTs for a supply voltage of 2000 V at 300 K. The switching losses of the SiC MOSFET are not affected by the temperature. Total energy loss increases (3.5 times) linearly with variation of the gate resistance from 6 Ω to 27 Ω. The capability of the SiC MOSFET to withstand short-circuit (SC) events under hard switch fault condition is also investigated. The SiC MOSFET power modules survived short circuit tests performed at a DC-link voltage of 1.5 kV and a pulse duration of 3 μs with a measured short-circuit energy of 6.4 J. The SiC power module failed when the pulse duration was increased to 4 μs, where a short-circuit energy of 9.1 J was obtained. The cause of the failure is the thermal runaway leading to a drain-source short.

Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules

Bisphenol A (BPA) can potentially trigger hormonal imbalances and affect aquatic species when discharged untreated into the ecosystems. This study explored the influencing factors, mechanism, and pathways of BPA degradation process in aqueous solution applying strong ionization discharge (SID) method. The results elaborate that 99.5% degradation rate was achieved in 60 min when 15 mg L−1 BPA solution was treated applying 3.74 kW of input power. Weak alkaline conditions were favorable to BPA removal in SID system. In addition, the inhibition of radical scavengers on the SID process laterally verified the presence of hydroxyl radicals (HO·) in the oxidation process besides ozone (O3). What is more, the addition of 15 mg L−1 sodium percarbonate (SPC) can improve 6.93% degradation rate of 30 mg L−1 BPA based on the SID system. Furthermore, ultraviolet-visible spectroscopy (UV-vis), high-performance liquid chromatography (HPLC), total organic carbon (TOC), and chemical oxygen demand (COD) analysis were conducted to measure the capacity of SID system for BPA treatment. The molecular analysis via liquid chromatography-mass spectrometer (LC-MS) and gas chromatography-mass spectrometer (GC-MS) showed that a portion of the intermediates in BPA degradation process were characterized by 3,4-dihydroxybenzoic acid, o-xylene, p-xylene, and propane-1,2,3-triol, etc., which were ultimately mineralized into CO2 and H2O. Based on the above analysis, the SID oxidation mechanism and pathways were proposed.

Mechanism and Degradation Pathways of Bisphenol A in Aqueous Solution by Strong Ionization Discharge

The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.

/pdf/pspice-modeling-platform-for-sic-power-mosfet-modules-with-4uejzhosb2.pdf

PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation

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