Methods and systems for evaluating the performance of multiple patterning processes are presented Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process In some embodiments, a single diffraction order different from zero is collected In some examples, a metrology target is designed to enhance light diffracted at an order different from zero

Measurement Of Multiple Patterning Parameters

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam

Full beam metrology for X-ray scatterometry systems

Methods and systems for creating an image-based measurement model based only on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The image-based measurement models receive image data directly as input and provide values of parameters of interest as output. In some embodiments, the image-based measurement model enables the direct measurement of overlay error. In some embodiments, overlay error is determined from images of on-device structures. In some other embodiments, overlay error is determined from images of specialized target structures. In some embodiments, image data from multiple targets, image data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the image-based measurement model building and training process.

Signal Response Metrology For Image Based Overlay Measurements

Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.

Signal response metrology for scatterometry based overlay measurements

One embodiment relates to a method of detecting a buried defect in a target microscopic metal feature. An imaging apparatus is configured to impinge charged particles with a landing energy such that the charged particles, on average, reach a depth within the target microscopic metal feature. In addition, the imaging apparatus is configured to filter out secondary electrons and detect backscattered electrons. The imaging apparatus is then operated to collect the backscattered electrons emitted from the target microscopic metal feature due to impingement of the charged particles. A backscattered electron (BSE) image of the target microscopic metal feature is compared with the BSE image of a reference microscopic metal feature to detect and classify the buried defect. Other embodiments, aspects and features are also disclosed.

Method and apparatus for detecting buried defects

A method, a system and a computer readable medium are provided. The method may include obtaining or receiving first area information representative of a first area of a first layer of an inspected object; wherein the inspected object further comprises a second layer that comprises a second area; wherein the second layer is buried under the first layer; directing electrons of a primary electron beam to interact with the first area; directing electrons of the primary electron beam to interact with the second area; generating detection signals responsive to electrons that were scattered or reflected from at least one of the first and second areas; and determining at least one spatial relationship between at least one feature of the first area and at least one feature of the second area based on the detection signals and on the first area information.

High electron energy based overlay error measurement methods and systems

PROBLEM TO BE SOLVED: To provide overlay error measuring method and system for a high electron energy base.SOLUTION: A method, a system, and a computer readable medium are provided. The method includes the steps of: acquiring or receiving the information of a first section indicating the first section of a first layer of a specimen, the specimen being buried under the first layer and further including a second layer having a second section; guiding electrons of a primary electron beam to interact with the first section; guiding the electrons of the primary electron beam to interact with the second section; generating a detection signal in response to the electrons scattered or reflected from at least one of the first and second sections; and determining, based on the detection signal and the information of the first section, at least one spatial relationship between at least one feature part of the first section and at least one feature part of the second section.

Overlay error measuring method and system for high electron energy base

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High electron energy based overlay error measurement methods and systems

Overlay error measuring method and system for high electron energy base