A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

Manufacturing a package using plateable encapsulant

Microelectronic devices including an electromagnetic shield over a desired portion of a substrate. The magnetic shield is formed of conductive particles within a selectively curable layer, such as a solder resist material. After application to the substrate, the conductive particles are allowed to settle to form a conductive structure to serve as an electromagnetic shield. The electromagnetic shield can be formed primarily over regions of the substrate containing conductive traces coupled in the package to communicate signals presenting a risk of causing electromagnetic interference with other devices.

Microelectronic device package electromagnetic shield

A semiconductor package includes a substrate having at least one semiconductor chip on a top surface of the substrate; a ground ring, on the top surface of the substrate, surrounding the at least one semiconductor chip; a metal-post reinforced glue wall disposed on the ground ring, surrounding the at least one semiconductor chip; a molding compound surrounding the at least one semiconductor chip, wherein a rear surface of the at least one semiconductor chip is flush with an upper surface of the molding compound; a conductive layer disposed on the molding compound and in direct contact with the rear surface of the semiconductor chip and the metal-post reinforced glue wall; a solder layer disposed on the conductive layer; and a heat sink disposed on the solder layer.

Semiconductor package with in-package compartmental shielding and improved heat-dissipation performance

A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.

Semiconductor package with plateable encapsulant and a method for manufacturing the same

Semiconductor packages and modules are provided. The semiconductor package includes a package substrate; a semiconductor chip disposed on the package substrate; a molding layer covering the semiconductor chip and a first region of the package substrate; and a functional layer covering the molding layer and extending onto a second region of the package substrate that surrounds the first region.

Semiconductor package and semiconductor module

Semiconductor packages and methods of forming semiconductor packages are described. In an example, a semiconductor package includes a shielding layer containing metal particles, e.g., conductive particles or magnetic particles, in a resin matrix to attenuate electromagnetic interference. In an example, the shielding layer is transferred from a molding chase to the semiconductor package during a polymer molding operation.

Semiconductor package having an EMI shielding layer

A process for applying an underfill material to a die is disclosed. A wafer is diced into a plurality of dies (without having any underfill film thereon) such that the dies have exposed bumps prior to an underfill process. Thus, the dies can be tested about their bump-sides because the bumps are entirely exposed for testing. The dies are then reconstituted bump-side up on a carrier panel in an array such that the dies are separated from each other by a gap. Underfill material (e.g., epoxy flux film) is then vacuum laminated to the carrier panel and the plurality of dies to encapsulate the dies. The underfill material is then cut between adjacent dies such that a portion of the underfill material covers at least one side edge of each die. The encapsulated dies are then removed from the carrier panel, thereby being prepared for a thermal bonding process to a substrate. Associated devices are provided.

Processes and methods for applying underfill to singulated die

Some embodiments relate to an electronic package The electronic package includes a first die and a second die stacked onto the first die A first encapsulant is positioned between the first die and the second die The first encapsulant includes a first material that covers a first volume between the first die and the second die A second encapsulant is positioned between the first die and the second die The second encapsulant includes a second material that covers a second volume between the first die and the second die The first material has a higher thermal conductivity than the second material, and the second material more effectively promotes electrical connections between the first die and the second die as compared to the first material

Electronic package and method of forming the same

Some embodiments relate to an electronic package. The electronic package includes a first die and a second die stacked onto the first die. A first encapsulant is positioned between the first die and the second die. The first encapsulant includes a first material that covers a first volume between the first die and the second die. A second encapsulant is positioned between the first die and the second die. The second encapsulant includes a second material that covers a second volume between the first die and the second die. The first material has a higher thermal conductivity than the second material, and the second material more effectively promotes electrical connections between the first die and the second die as compared to the first material.

Two material high k thermal encapsulant system

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Semiconductor package having an EMI shielding layer

Processes and methods for applying underfill to singulated die

Electronic package and method of forming the same

Two material high k thermal encapsulant system