In a method of manufacturing a stacked-type semiconductor device, firstly, a first semiconductor substrate having a first device formed thereon is covered with an interlayer insulating layer and a planarized polycrystalline silicon layer is formed on the interlayer insulating layer. The first semiconductor substrate and a second semiconductor substrate are joined together by putting the surface of the polycrystalline silicon layer in close contact with the surface of a refractory metal layer formed on the second semiconductor substrate, applying thermal treatment at 700° C. or below and changing the refractory metal layer to silicide.

Stacked-type semiconductor device

A method for increasing integrated circuit density is disclosed comprising stacking an upper wafer and a lower wafer, each of which having fabricated circuitry in specific areas on their respective face surfaces. The upper wafer is attached back-to-back with the lower wafer with a layer of adhesive applied over the back side of the lower wafer. The wafers are aligned so as to bring complementary circuitry on each of the wafers into perpendicular alignment. The adhered wafer pair is then itself attached to an adhesive film to immobilize the wafer during dicing. The adhered wafer pair may be diced into individual die pairs or wafer portions containing more than one die pair.

Method of fabrication of stacked semiconductor devices

A light valve has a composite substrate comprised of an electrically insulating substrate and a semiconductor single crystal thin film formed over the electrically insulating substrate. A pixel array comprising semiconductor switch elements is formed in the semiconductor single crystal thin film. A peripheral circuit having circuit elements is formed in the semiconductor single crystal thin film so that a small-sized, high speed light valve is obtained. X- driver and Y-driver circuits are formed in the semiconductor single crystal thin film and controlled by a control circuit, such as a video signal processing circuit, which receives and processes video signals inputted directly from an external source. The peripheral circuit can be a DRAM sense amplifier for sensing charges stored in each pixel of the pixel array to detect defects in the pixel array. The peripheral circuit can be a photosensor circuit for detecting an intensity of incident light to monitor the performance of a light source of the light valve. The peripheral circuit can be a temperature sensor for detecting the temperature of a liquid crystal layer of the light valve, and may be comprised of Darlington connected NPN transistors formed in the semiconductor single crystal thin film. The peripheral circuit can also be a solar cell for converting incident light into electrical energy to supply power to at least one of the pixel array, X-driver and Y-driver circuits and the peripheral circuit.

Light valve device

Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon-nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers.

Bonded wafer processing with metal silicidation

A stacked semiconductor device includes a first and second semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the first and second semiconductor devices include active circuitry. The first and second semiconductor devices are stacked so that the first major surface of the first semiconductor device faces the first major surface of the second semiconductor device. At least one continuous conductive via extends from the second major surface of the first semiconductor device to the first major surface of the second semiconductor device. Conductive material fills a cavity adjacent to the contact pad and is in contact with one side of the contact pad. Another side of the contact pad of the first semiconductor device faces and is in contact with another side of the contact pad of the second semiconductor device.

Stacked semiconductor devices

According to the present invention, a silicon wafer, silicon dioxide wafer or silicon wafer having a silicon dioxide film thereon can be mutually adhered. The procedure for the adhesion is that a refractory metal, such as zirconium, is deposited by sputtering on a flat surface to be adhered, and tightly stacked onto another substrate made of silicon, silicon dioxide or silicon having a silicon dioxide film thereto, and the stacked wafers are heated in an atmosphere of argon containing 4% hydrogen at approximately 650° C. for approximately 2 hours. The heat causes the deposited zirconium to react with the silicon of both the contacting wafers and is converted into a zirconium silicide alloy, which bonds the wafers. If the wafer is silicon dioxide or coated with silicon dioxide, the zirconium reduces the dioxide to produce silicon, which is then alloyed with the zirconium. Refractory metals other than group IVa and group Va elements can adhere silicon to silicon only. Advantages of this adhesion method are: the process is carried out at approximately 650° C., which does not harm fabricated devices; the adhesion withstands temperatures of 1000° C. which are used for fabricating devices; and the processing does not require strict control of the surface conditions. This method can be applied to the process of making SOI, a wafer-scale integrated LSi, or a three-dimensional LSI.

Method for adhesion of silicon or silicon dioxide plate

In a procedure for effecting mutual adhesion of a silicon wafer, a silicon dioxide wafer or a silicon wafer (11, 12) having a silicon dioxide film (13, 14) thereon, a refractory metal, such as zirconium, is deposited by sputtering on a flat surface to be adhered, and tightly stacked on to another substrate (15) made of silicon, silicon dioxide or silicon having a silicon dioxide film thereon, and the stacked wafers are heated in an atmosphere of argon containing 4% hydrogen at approximately 650 DEG C for 2 hours. By the heat, the deposited zirconium reacts with the silicon of both the contacting wafers and is converted into zirconium silicide alloy (18) which bonds the wafers. If the wafer is silicon dioxide or coated with silicon dioxide, the zirconium reduces the dioxide to produce silicon, which is then alloyed with the zirconium. Refractory metals other than zirconium, titanium and hafnium can adhere silicon to silicon only. Advantages of this adhesion method are: the process is carried out at approximately 650 DEG C which does not harm fabricated devices, but the adhesion withstands 1000 DEG C which is used for fabricating devices, and the processing does not require strict control of the surface condition. This method is applied for making SOI, a wafer-scale integrated LSI, and three-dimensional LSI.

A method for effecting adhesion of silicon or silicon dioxide plates.

PURPOSE:To bury the sharply stepped portion with a film in a short period of time by depositing a film with isotropic chemical vapor growth method on a substrate to which a bias voltage is applied CONSTITUTION:A thick silicon dioxide film 3 is deposited also at the sharp side wall of 90 deg in a recessed portion 2 Thereby, the recessed portion 2 is quickly buried because the silicon dioxide film 3 is deposited from both the side wall and botton directions After the recessed portion 2 is buried completely, an angle theta2 of inclined surface at the remaining stepped portion is small Therefore, the surface of silicon dioxide film 3 becomes very smooth When the deposition rate by the CVD method is increased and is matched to the peak of etching rate by sputter etching, the angle theta becomes about 45 deg and such condition is the most optimum state for burying the recessed portion 2

Formation of film

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Method for adhesion of silicon or silicon dioxide plate

A method for effecting adhesion of silicon or silicon dioxide plates.

Formation of film