Madan Dubey
United States Army Research Laboratory
185 Papers
1.3K Citations
Madan Dubey is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Graphene & Electron mobility. The author has an hindex of 49, co-authored 185 publications. Previous affiliations of Madan Dubey include United States Department of Defense.
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Papers
Two-dimensional material nanophotonics
TL;DR: In this article, the optical properties and applications of various two-dimensional materials including transition metal dichalcogenides are reviewed with an emphasis on nanophotonic applications, and two different approaches for enhancing their interactions with light: through their integration with external photonic structures, and through intrinsic polaritonic resonances.
2.9K
Integrated Circuits Based on Bilayer MoS2 Transistors
Han Wang,Lili Yu,Yi-Hsien Lee,Yi-Hsien Lee,Yumeng Shi,Allen Hsu,Matthew L. Chin,Lain-Jong Li,Madan Dubey,Jing Kong,Tomas Palacios +10 more
TL;DR: This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology based on the semiconducting nature of molybdenum disulfide.
Synthesis Of Nitrogen-Doped Graphene Films For Lithium Battery Application
Arava Leela Mohana Reddy,Anchal Srivastava,Sanketh R. Gowda,Hemtej Gullapalli,Madan Dubey,Pulickel M. Ajayan +5 more
TL;DR: A controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique is demonstrated, making this a feasible and efficient process for integration into current battery manufacture technology.
1.6K
Silicene field-effect transistors operating at room temperature
Li Tao,Eugenio Cinquanta,Daniele Chiappe,Carlo Grazianetti,Marco Fanciulli,Madan Dubey,Alessandro Molle,Deji Akinwande +7 more
TL;DR: A silicene field-effect transistor is reported, corroborating theoretical expectations regarding its ambipolar Dirac charge transport, with a measured room-temperature mobility of ∼100 cm(2) V(-1)s(-1), attributed to acoustic phonon-limited transport and grain boundary scattering.
1.6K
Tunable Transport Gap in Phosphorene
TL;DR: It is experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ∼0.3 to ∼1.0 eV when the flake thickness is scaled down from bulk to a single layer, and the asymmetry of the electron and the hole current was found to be dependent on the layer thickness.
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