M. Deicher
Saarland University
21 Papers
123 Citations
M. Deicher is an academic researcher from Saarland University. The author has contributed to research in topics: Acceptor & Ion implantation. The author has an hindex of 8, co-authored 21 publications.
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Papers
The solid state physics programme at ISOLDE: recent developments and perspectives
Karl Johnston,Juliana Schell,Juliana Schell,J. G. Correia,J. G. Correia,M. Deicher,Haraldur P. Gunnlaugsson,A. S. Fenta,A. S. Fenta,A. S. Fenta,E David-Bosne,E David-Bosne,A R G Costa,A R G Costa,Doru C. Lupascu +14 more
TL;DR: In this paper, the authors gratefully acknowledge many years of support given to the maintenance and upgrade of the solid state physics laboratories and provision of large scale equipment by the Federal Ministry of Education and Research (BMBF) through different grants, including 05K13TSA and 05K16PGA, from Fundacao para a Ciencia e a Tecnologia (FCT) project CERN-FIS-NUC-0004-2015 and Research Foundation Flanders (FWO) in collaboration with the University of Leuven (KU Leu
Intrinsic limitations of doping diamonds by heavy‐ion implantation
TL;DR: In this paper, the perturbed angular correlation technique was used to study the local environment of 111In implanted into diamonds by means of the perturbation of angular correlation as a function of annealing temperature and implantation dose.
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Influence of electronic parameters on the electric-field gradients induced by H at the probe atom 111In/111Cd in Si.
H. Skudlik,M. Deicher,R. Keller,Robert Magerle,Walter Pfeiffer,D. Steiner,Ekkehard Recknagel,Th. Wichert +7 more
TL;DR: It is shown that PAC is well suited for use in combination with electrical techniques, which works at any temperature and over a wide range of dopant concentrations, is also sensitive to different charge states of the defect complexes formed.
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In and Cd as defect traps in titanium dioxide
Juliana Schell,Juliana Schell,Doru C. Lupascu,J. G. Correia,J. G. Correia,Artur W. Carbonari,M. Deicher,M. B. Barbosa,Ronaldo Domingues Mansano,Karl Johnston,Ibere S. Ribeiro +10 more
TL;DR: In this article, a study of TiO2 single crystals from the point of view of the dopant atom that simultaneously behaves as the probing element was presented, where gamma-gamma time dependent perturbed angular correlations working with selected tracer elements were used to investigate the different behavior of Cd and In dopants.
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Annealing of Cd‐implanted GaAs: Defect removal, lattice site occupation, and electrical activation
N. Moriya,I. Brener,Rafi Kalish,Walter Pfeiffer,M. Deicher,R. Keller,Robert Magerle,Ekkehard Recknagel,H. Skudlik,Th. Wichert,Herbert Wolf +10 more
TL;DR: In this article, a systematic investigation of the behavior of Cd-implanted GaAs after rapid thermal annealing is presented, where the use of various experimental techniques gives a detailed picture regarding the anneal process in the low-dose regime (1012 and 1013 cm−2) on a microscopic as well as on a macroscopic scale.
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