Lining Zhang
Peking University
177 Papers
640 Citations
Lining Zhang is an academic researcher from Peking University. The author has contributed to research in topics: MOSFET & Field-effect transistor. The author has an hindex of 18, co-authored 176 publications. Previous affiliations of Lining Zhang include Shenzhen University & Hong Kong University of Science and Technology.
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Papers
An improved computationally efficient drain current model for double-gate MOSFETs
Xingye Zhou,Jian Zhang,Zhize Zhou,Lining Zhang,Chenyue Ma,Wen Wu,Wei Zhao,Xing Zhang +7 more
- 13 Dec 2010
TL;DR: A drain current model with improved computational efficiency for double-gate (DG) MOSFETs is presented in this paper, where the model is implemented into HSPICE circuit simulator in Verilog-A.
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A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs
TL;DR: In this article, an analytic surface potential-based non-charge-sheet core model for intrinsic nanowire surrounding-gate (SRG) MOSFETs is presented.
4
A Smooth and Continuous Phase Change Memory SPICE Model for Improved Convergence
Dayong Liu,Lining Zhang,Xinnan Lin,Mansun Chan +3 more
- 01 Mar 2018
TL;DR: In this article, a phase change memory model including the geometric dependent resistance module, temperature and crystallization kinetic modules is presented, where a mathematically formulated function is used for memory switching to ensure the smoothness of the currents and derivatives for fast convergence.
4
Low voltage SRAM design using tunneling regime of CNTFET
Zubair Ahmed,Khawar Sarfraz,Lining Zhang,Mansun Chan +3 more
- 01 Dec 2014
TL;DR: In this article, a lowvoltage technique for static random access memory (SRAM) bit-cell design using the ambipolar characteristics of Carbon Nanotube field effect transistor (CNTFET) is presented.
4
Channel doping effects in negative capacitance field-effect transistors
Baoliang Liu,Xiaoqing Huang,Yanxin Jiao,Ning Feng,Xuhui Chen,Zhao Rong,Xinnan Lin,Lining Zhang,Xiaole Cui +8 more
TL;DR: In this article, the channel doping effects in negative capacitance field effect transistors (NCFETs) of the metal-ferroelectric-insulator-semiconductor (MFIS) structure are analyzed, and an analytical model is developed.
4