80 Papers
238 Citations
Lei Lin is an academic researcher from Huazhong University of Science and Technology. The author has contributed to research in topics: Voltage & Capacitor. The author has an hindex of 14, co-authored 66 publications.
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Papers
Improved Nearest-Level Modulation for a Modular Multilevel Converter With a Lower Submodule Number
TL;DR: In this article, an improved nearest-level modulation (NLM) method was proposed to enhance the quality of output voltage of a modular multilevel converter (MMC) with the low amount of submodules, as well as restrain the voltage fluctuation of the submodules.
138
Improved Design and Control of FBSM MMC With Boosted AC Voltage and Reduced DC Capacitance
TL;DR: An SM capacitance reduction method for full-bridge submodule (FBSM)-MMC, which combines circulating current injection and ac voltage boosting, and an optimized circulating current control method considering the limitation of fixed semiconductor current rating is introduced.
115
Analysis and Enhanced Control of Hybrid-MMC-Based HVDC Systems During Asymmetrical DC Voltage Faults
TL;DR: In this paper, the authors presented an enhanced control for HVDC systems employing hybrid modular multilevel converters (MMCs) during asymmetrical dc voltage faults, which can operate continuously with adjustable active power and controllable reactive power by controlling upper and lower arms of the converter asymmetrically during a fault period.
114
High-Frequency Oscillation Mechanism Analysis and Suppression Method of VSC-HVDC
TL;DR: In this paper, the authors studied the high-frequency oscillation of voltage-source converters (VSCs) in high-voltage dc transmission (HVDC) and proposed an improved suppression method based on the Nyquist curves in the complex plane.
56
A SiC MOSFET and Si IGBT Hybrid Modular Multilevel Converter With Specialized Modulation Scheme
TL;DR: In this article, a SiC MOSFET and an Si IGBT hybrid MMC are proposed to solve the high conduction loss at the high power levels, and a specialized modulation scheme is proposed to move most of the switching actions from the Si SMs to the SiC SM.
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