Ken Ninomiya
Hitachi
60 Papers
1.5K Citations
Ken Ninomiya is an academic researcher from Hitachi. The author has contributed to research in topics: Etching (microfabrication) & X-ray photoelectron spectroscopy. The author has an hindex of 21, co-authored 60 publications. Previous affiliations of Ken Ninomiya include University of Tsukuba.
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Papers
Complete sequencing and characterization of 21,243 full-length human cDNAs
Toshio Ota,Yutaka Suzuki,Tetsuo Nishikawa,Tetsuji Otsuki,Tomoyasu Sugiyama,Ryotaro Irie,Ai Wakamatsu,Koji Hayashi,Hiroyuki Sato,Keiichi Nagai,Kouichi Kimura,Hiroshi Makita,Mitsuo Sekine,Masaya Obayashi,Tatsunari Nishi,Toshikazu Shibahara,Toshihiro Tanaka,Shizuko Ishii,Junichi Yamamoto,Kaoru Saito,Yuri Kawai,Yuko Isono,Yoshitaka Nakamura,Kenji Nagahari,Katsuhiko Murakami,Tomohiro Yasuda,Takao Iwayanagi,Masako Wagatsuma,Akiko Shiratori,Hiroaki Sudo,Takehiko Hosoiri,Yoshiko Kaku,Hiroyo Kodaira,Hiroshi Kondo,Masanori Sugawara,Makiko Takahashi,Katsuhiro Kanda,Takahide Yokoi,Takako Furuya,Emiko Kikkawa,Yuhi Omura,Kumi Abe,Kumiko Kamihara,Naoko Katsuta,Kazuomi Sato,Machiko Tanikawa,Makoto Yamazaki,Ken Ninomiya,Tadashi Ishibashi,Hiromichi Yamashita,Katsuji Murakawa,Kiyoshi Fujimori,Hiroyuki Tanai,Manabu Kimata,Motoji Watanabe,Susumu Hiraoka,Yoshiyuki Chiba,Shinichi Ishida,Yukio Ono,Sumiyo Takiguchi,Susumu Watanabe,Makoto Yosida,Tomoko Hotuta,Junko Kusano,Keiichi Kanehori,Asako Takahashi-Fujii,Hiroto Hara,Tomo-o Tanase,Yoshiko Nomura,Sakae Togiya,Fukuyo Komai,Reiko Hara,Kazuha Takeuchi,Miho Arita,Nobuyuki Imose,Kaoru Musashino,Hisatsugu Yuuki,Atsushi Oshima,Naokazu Sasaki,Satoshi Aotsuka,Yoko Yoshikawa,Hiroshi Matsunawa,Tatsuo Ichihara,Namiko Shiohata,Sanae Sano,Shogo Moriya,Hiroko Momiyama,Noriko Satoh,Sachiko Takami,Yuko Terashima,Osamu Suzuki,Satoshi Nakagawa,Akihiro Senoh,Hiroshi Mizoguchi,Yoshihiro Goto,Fumio Shimizu,Hirokazu Wakebe,Haretsugu Hishigaki,Takeshi Watanabe,Akio Sugiyama,Makoto Takemoto,Bunsei Kawakami,Masaaki Yamazaki,Koji Watanabe,Ayako Kumagai,Shoko Itakura,Yasuhito Fukuzumi,Yoshifumi Fujimori,Megumi Komiyama,Hiroyuki Tashiro,Akira Tanigami,Tsutomu Fujiwara,Toshihide Ono,Katsue Yamada,Yuka Fujii,Kouichi Ozaki,Maasa Hirao,Yoshihiro Ohmori,Ayako Kawabata,Takeshi Hikiji,Naoko Kobatake,Hiromi Inagaki,Yasuko Ikema,Sachiko Okamoto,Rie Okitani,Takuma Kawakami,Saori Noguchi,Tomoko Itoh,Keiko Shigeta,Tadashi Senba,Kyoka Matsumura,Yoshie Nakajima,Takae Mizuno,Misato Morinaga,Masahide Sasaki,Takushi Togashi,Masaaki Oyama,Hiroko Hata,Manabu Watanabe,Takami Komatsu,Junko Mizushima-Sugano,Tadashi Satoh,Tadashi Satoh,Yuko Shirai,Yukiko Takahashi,Kiyomi Nakagawa,Koji Okumura,Takahiro Nagase,Nobuo Nomura,Hisashi Kikuchi,Yasuhiko Masuho,Riu Yamashita,Kenta Nakai,Tetsushi Yada,Yusuke Nakamura,Osamu Ohara,Takao Isogai,Sumio Sugano,Sumio Sugano +158 more
TL;DR: There seems to be a slight bias against GC-rich transcripts in current gene prediction procedures in the “full-length long Japan” collection of sequenced human cDNAs.
Patent
Method and apparatus for surface treatment by plasma
Keizo Suzuki,Ken Ninomiya,Shigeru Nishimatsu,Sadayuki Okudaira,Osami Okada +4 more
- 21 Aug 1984
TL;DR: In this article, a controller is used as a mechanism for changing the quantity of gas introduced in a vacuum chamber, according to a predetermined program, or by signals obtained by detecting the surface conditions of the specimen during the surface treatment.
239
Microwave plasma etching
TL;DR: In this paper, a microwave plasma etching system is described, which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, magnetic field forming means (7) for forming a magnetic field in the discharge space, microwave electric field forming (3), and substrate holding means (11) for holding substrates to be processed in the vacuum chamber.
217
Patent
Surface treatment apparatus
Keizo Suzuki,Ken Ninomiya,Shigeru Nishimatsu,Osami Okada +3 more
- 24 Jan 1984
TL;DR: A surface treatment apparatus comprising a vacuum chamber, a gas furnace for heating and activating the gas while it is being introduced, apertures for injecting the heated gas, and a substrate stage for holding a substrate of which the surface is to be treated by the injected gas as discussed by the authors.
111
Patent
Method for growing silicon-including film by employing plasma deposition
Keizo Suzuki,Atsushi Hiraiwa,Shigeru Takahashi,Shigeru Nishimatsu,Ken Ninomiya,Sadayuki Okudaira +5 more
- 20 Jun 1983
TL;DR: In this paper, a method for growing a silicon-including film is described, in which the above film is grown on a surface of a substrate by using, as a discharge gas, a halogenide silicon gas or a gas mixture containing a hydrogen sulfide-silicon gas in a plasma deposition apparatus including a vacuum chamber.
98