Karol Kalna
Swansea University
196 Papers
824 Citations
Karol Kalna is an academic researcher from Swansea University. The author has contributed to research in topics: Monte Carlo method & MOSFET. The author has an hindex of 20, co-authored 192 publications. Previous affiliations of Karol Kalna include Slovak Academy of Sciences & University of Santiago de Compostela.
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Papers
FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
Daniel Nagy,Guillermo Indalecio,Antonio J. Garcia-Loureiro,Muhammad A. Elmessary,Karol Kalna,Natalia Seoane +5 more
TL;DR: In this article, the performance, scalability, and resilience of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3D simulation tools.
Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes
Daniel Nagy,Gabriel Espineira,Guillermo Indalecio,Antonio J. Garcia-Loureiro,Karol Kalna,Natalia Seoane +5 more
TL;DR: Nanosheet (NS) and nanowire FET architectures scaled to a gate length of 16 nm and below are benchmarked against equivalent FinFETs and the NW FET becomes the most promising architecture offering an almost ideal sub-threshold swing.
High Mobility III-V MOSFETs For RF and Digital Applications
Matthias Passlack,P. Zurcher,K. Rajagopalan,Ravindranath Droopad,Jonathan K. Abrokwah,M. Tutt,Y.-B. Park,E. Johnson,Olin L. Hartin,A. Zlotnicka,Peter Fejes,Hill Richard J,David A. J. Moran,Xu Li,Haiping Zhou,Douglas Macintyre,S. Thorns,Asen Asenov,Karol Kalna,Iain G. Thayne +19 more
- 01 Jan 2007
TL;DR: In this article, a review of the development of III-V MOSFETs with high mobility channels is presented, and the authors discuss properties of the GdGaO/ Ga2O3 MOS systems, present GaAs MOS-FET DC and RF data, and conclude with an outlook for high indium content channel MOS FETs.
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors
Antonio J. Garcia-Loureiro,Natalia Seoane,Manuel Aldegunde,R. Valin,Asen Asenov,Antonio Martinez,Karol Kalna +6 more
TL;DR: Test simulations of a 1-D metal-oxide semiconductor diode demonstrate that the DG approach discretized using the new, second-order differential (SOD) scheme can be accurately calibrated against Schrödinger-Poisson calculations exhibiting lower discretization error than the previous schemes when using coarse grids.
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Scaling of pseudomorphic high electron mobility transistors to decanano dimensions
TL;DR: In this paper, the performance enhancement associated with the scaling of pseudomorphic high electron mobility transistors (PHEMTs) to deep decanano dimensions is studied using Monte Carlo (MC) simulations.
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