Juergen Steinbrenner
Infineon Technologies
13 Papers
63 Citations
Juergen Steinbrenner is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Layer (electronics) & Semiconductor. The author has an hindex of 3, co-authored 13 publications.
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Papers
Patent
Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer
Gerhard Schmidt,Kahn Markus,Christian Maier,Philipp Sebastian Koch,Juergen Steinbrenner +4 more
- 29 May 2015
TL;DR: In this paper, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber is coupled to a processing chamber for processing the semiconductor layers.
43
Patent
Semiconductor wafer and method for processing a semiconductor wafer
Matthias Kuenle,Gerhard Schmidt,Martin Sporn,Kahn Markus,Juergen Steinbrenner,Ravi Keshav Joshi +5 more
- 30 May 2014
TL;DR: In this paper, a semiconductor wafer is defined as a body including an integrated circuit structure, and at least one tetrahedral amorphous carbon layer formed over or in the integrated circuit, and the carbon layer may include a substance amount fraction of sp 3 -hybridized carbon of larger than approximately 0.4.
6
Patent
Method of Forming a Trench Using Epitaxial Lateral Overgrowth and Deep Vertical Trench Structure
Ravi Keshav Joshi,Johannes Baumgartl,Martin Poelzl,Matthias Kuenle,Juergen Steinbrenner,Andreas Haghofer,Christoph Gruber,Georg Ehrentraut +7 more
- 06 Feb 2014
TL;DR: In this paper, a method of forming a trench in a semiconductor material includes forming a first dielectric layer on the semiconductor substrate by an epitaxial lateral overgrowth process.
6
Patent
Intermediate layer for copper structuring and methods of formation thereof
Ravi Keshav Joshi,Juergen Steinbrenner,Christian Fachmann,Petra Fischer,Roman Roth +4 more
- 28 Jan 2015
TL;DR: In this paper, a blanket layer of a power metal layer including copper is deposited over the intermediate layer, which is composed of a solid solution of a majority element and copper, and has a different etch selectivity from the power metal.
3
Patent
Passivation Layer and Method of Making a Passivation Layer
Kurt Matoy,Hubert Maier,Christian Krenn,Elfriede Wellenzohn,Helmut Schoenherr,Juergen Steinbrenner,Markus Kahn,Silvana Fister,Christoph Brunner,Herbert Gietler,Uwe Höckele +10 more
- 29 Apr 2015
TL;DR: In this paper, a passivation layer and a method of making a passivated layer are disclosed, which includes depositing a first silicon-based dielectric layer on a workpiece, the first silicon based dielectrics layer comprising nitrogen, and depositing in-situ a second silicon based layer on the first layer, the second layer comprising oxygen.
3