Jianfang Xu
Xiamen University
30 Papers
88 Citations
Jianfang Xu is an academic researcher from Xiamen University. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 8, co-authored 30 publications.
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Papers
Carbon-coated Si micrometer particles binding to reduced graphene oxide for a stable high-capacity lithium-ion battery anode
TL;DR: In this article, the MSi/C/reduced graphene oxide (RGO) structure was proposed to resolve the electrical conduction problem of MSi-based anodes.
28
Raman scattering study of amorphous GeSn films and their crystallization on Si substrates
Lu Zhang,Yisen Wang,Ningli Chen,Guangyang Lin,Cheng Li,Wei Huang,Songyan Chen,Jianfang Xu,Jianyuan Wang +8 more
TL;DR: In this article, the dependence of Raman scattering spectra on Sn composition in amorphous Ge1-xSnx films deposited on Si(001) substrates by magnetron sputtering is investigated.
24
An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries
Run You,Xiang Han,Xiang Han,Ziqi Zhang,Lianchuan Li,Cheng Li,Wei Huang,Jianyuan Wang,Jianfang Xu,Songyan Chen +9 more
TL;DR: In this paper, an environmental friendly water-soluble binder of oxidized starch cross-linked sodium carboxymethyl cellulose (OS-CMC) possessing three-dimensional (3D) network structure is designed.
20
Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature
Guangyang Lin,Dongxue Liang,Jiaqi Wang,Chunyu Yu,Cheng Li,Songyan Chen,Wei Huang,Jianyuan Wang,Jianfang Xu +8 more
TL;DR: Wang et al. as mentioned in this paper studied the strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique, which was beneficial to obtain more uniform SiGe layers with lower surface roughness, thus better material quality.
18
Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics
Chao Lu,Jue Yu,Xiaowei Chi,Guangyang Lin,Xiaoling Lan,Wei Huang,Jianyuan Wang,Jianfang Xu,Chen Wang,Cheng Li,Songyan Chen,Chunli Liu,Hongkai Lai +12 more
TL;DR: In this paper, a bipolar one-diode-one-resistor (1D1R) device with a Pt/HfO2/Ti/n-Si(001) structure was demonstrated.
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