Jason Henning
Cree Inc.
32 Papers
361 Citations
Jason Henning is an academic researcher from Cree Inc.. The author has contributed to research in topics: Transistor & Layer (electronics). The author has an hindex of 11, co-authored 32 publications.
Chat about Author
Papers
Patent
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
Zoltan Ring,Helmut Hagleitner,Jason Henning,Andrew K. Mackenzie,Scott Allen,Scott T. Sheppard,Richard Peter Smith,Saptharishi Sriram,Allan Ward +8 more
- 27 Aug 2008
TL;DR: In this paper, a passivated semiconductor structure and associated method are disclosed, which includes a silicon carbide substrate or layer, an oxidation layer on the silicon carbides substrate for lowering the interface density between the substrate and the thermal oxidation layer, a first sputtered non-stoichiometric silicon nitride layer on thermal oxidizer layer for reducing parasitic capacitance and minimizing device trapping, and a second sputtered stoichiometric silicon oxide layer on first layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers.
79
Patent
Asymetric layout structures for transistors and methods of fabricating the same
Saptharishi Sriram,Jason Henning +1 more
- 25 Aug 2005
TL;DR: In this article, high power transistors are provided, which include a source region (20), a drain region (22), and a gate contact (24), where the gate contact is positioned between the source region and the drain region.
53
Patent
Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
Qingchun Zhang,Jason Henning +1 more
- 04 Apr 2012
TL;DR: In this paper, the edge termination structure is defined as a recessed region that is recessed from the surface of the drift region by a distance d that may be about 0.5 microns.
24
Patent
Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
Allan Ward,Jason Henning +1 more
- 21 Dec 2006
TL;DR: In this article, an improved termination structure for high field semiconductor devices in silicon carbide is presented, which includes an active region in the device, an edge termination passivation for the active region, and a stoichiometric layer of silicon nitride on the nonstochoric layer and the oxide layer.
22
Patent
Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
Allan Ward,Jason Henning,Hagleitner Helmut,Keith Wieber +3 more
- 30 Jun 2005
TL;DR: In this article, a method of producing an ohmic contact and a resulting ohmic structure is described, which includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below the temperature at which either element will react with silicon carbides and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atom fraction of nickel.
21