Since the discovery of highly conducting polyacetylene by Shirakawa, MacDiarmid, and Heeger in 1977, π-conjugated systems have attracted much attention as futuristic materials for the development and production of the next generation of electronics, that is, organic electronics. Conceptually, organic electronics are quite different from conventional inorganic solid state electronics because the structural versatility of organic semiconductors allows for the incorporation of functionality by molecular design. This versatility leads to a new era in the design of electronic devices. To date, the great number of π-conjugated semiconducting materials that have either been discovered or synthesized generate an exciting library of π-conjugated systems for use in organic electronics. 11 However, some key challenges for further advancement remain: the low mobility and stability of organic semiconductors, the lack of knowledge regarding structure property relationships for understanding the fundamental chemical aspects behind the structural design, and realization of desired properties. Organic field-effect transistors (OFETs) are a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals (drain, source, and gate electrodes). OFETs are not only essential building blocks for the next generation of cheap and flexible organic circuits, but they also provide an important insight into the charge transport of πconjugated systems. Therefore, they act as strong tools for the exploration of the structure property relationships of πconjugated systems, such as parameters of field-effect mobility (μ, the drift velocity of carriers under unit electric field), current on/off ratio (the ratio of the maximum on-state current to the minimum off-state current), and threshold voltage (the minimum gate voltage that is required to turn on the transistor). 17 Since the discovery of OFETs in the 1980s, they have attracted much attention. Research onOFETs includes the discovery, design, and synthesis of π-conjugated systems for OFETs, device optimization, development of applications in radio frequency identification (RFID) tags, flexible displays, electronic papers, sensors, and so forth. It is beyond the scope of this review to cover all aspects of π-conjugated systems; hence, our focus will be on the performance analysis of π-conjugated systems in OFETs. This should make it possible to extract information regarding the fundamental merit of semiconducting π-conjugated materials and capture what is needed for newmaterials and what is the synthesis orientation of newπ-conjugated systems. In fact, for a new science with many practical applications, the field of organic electronics is progressing extremely rapidly. For example, using “organic field effect transistor” or “organic field effect transistors” as the query keywords to search the Web of Science citation database, it is possible to show the distribution of papers over recent years as shown in Figure 1A. It is very clear

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm2 V–1 s–1 have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future.

/pdf/25th-anniversary-article-organic-field-effect-transistors-56cmlfirhg.pdf

25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.

The full color 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an active-matrix back plane It was found that the fabricated AMOLED display did not suffer from the well-known pixel non-uniformity of luminance, even though the simple structure consisting of 2 transistors and 1 capacitor was adopted as a unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductor The n-channel a-IGZO TFTs exhibited the field-effect mobility of 82 cm2/Vs, threshold voltage of 11 V, on/off ratio of > 108, and subthreshold gate swing of 058 V/decade The AMOLED display with a-IGZO TFT array would be promising for large size applications such as note PC and HDTV because a-IGZO semiconductor can be deposited on large glass substrate (> Gen 7) using conventional sputtering system

3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed.

25th anniversary article: key points for high-mobility organic field-effect transistors.

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure–property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Organic semiconductor crystals

Zinc Oxide 120

In situ electrical characterization of DH4T field-effect transistors

In this paper it is demonstrated that Raman spectroscopy can be used for in situ online monitoring of semiconductor layer growth. For this purpose an ultra‐high‐vacuum chamber was designed to suit molecular beam epitaxial growth as well as simultaneous optical measurements utilizing a multichannel detection Raman system. As a result Raman spectra can be taken while growth progresses. As shown by the example of InSb growth, they provide information on the interface chemistry, crystal quality of the growing layer, and the growth mode as well.

Raman monitoring of semiconductor growth

Optimized sub-micron organic thin-film transistors: the influence of contacts and oxide thickness

We have studied the surface phonon modes of the reconstructed Si(111)-($7\ifmmode\times\else\texttimes\fi{}7$) surface by polarized Raman spectroscopy. Six surface vibration modes are observed in the frequency range between 62.5 and 420.0 cm${}^{\ensuremath{-}1}$. The mode frequencies agree very well with reported calculation results. This enables their attribution to calculated eigenmodes, whose elongation patterns are dominated by specific atomic sites: the two most characteristic novel fingerprints of the ($7\ifmmode\times\else\texttimes\fi{}7$) reconstruction are sharp Raman peaks from localized adatom vibrations, located at 250.9 cm${}^{\ensuremath{-}1}$, and collective vibrations of the adatoms and first- and second-layer atoms, located at 420.0 cm${}^{\ensuremath{-}1}$. While the sharp localized adatom vibration peak is a substantial refinement of an earlier broad spectral structure from electron energy-loss spectroscopy, no spectroscopic features were reported before in the collective-vibration frequency region. Furthermore, we observe in-plane wagging vibrations in the range from 110 to 140 cm${}^{\ensuremath{-}1}$, and finally the backfolded acoustic Rayleigh wave at 62.5 cm${}^{\ensuremath{-}1}$, which coincides with helium atom scattering data. Moreover, the Raman peak intensities of the surface phonons show a mode-specific dependence on the polarization directions of incident and scattered light. From this polarization dependence the relevant symmetry components in the Raman scattering process (${A}_{1}$ and/or $E$ symmetry) are deduced for each mode.

Surface phonons of the Si(111)-( 7 × 7 ) reconstruction observed by Raman spectroscopy

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