PURPOSE:To prevent hot electrons from implanting into a thick field oxide film by facing in parallel at an equal interval a first well layer containing a first impurity diffused layer connected to an input terminal and a second well layer containing a second impurity diffused layer connected to a ground potential under a thick insulating film between the two diffused layers. CONSTITUTION:When an abnormal voltage is applied to a bonding pad 101, an input protecting device has an N-type impurity diffused layer 103A connected to the pad 101, an N-type impurity well layer 115A for enclosing the layer 103A, an N-type impurity diffused layer 103B connected to a ground potential, and an N-type impurity well layer 115B enclosing the layer 103B adjacently at an extremely narrow interval. Since the layers 115A, 115B having deeper impurity regions than those of the layers 103A, 103B are formed, the hot electrons generated by the abnormal voltage applied to the pad 101 flow in a P-type semiconductor substrate 110. Thus, the reduction in the implantation of the hot electrons into a thick field oxide film 107A does not occur, and a semiconductor device having a high strength against abnormal voltage can be formed.

Semiconductor input protecting device

PURPOSE:To obtain superb input and output protective property by superposing a source or a drain layer immediately below the edge of a polysilicon gate electrode on a field oxide film. CONSTITUTION:A field oxide film 12 and an oixde film 13 are formed on the face (1,000) of a P type silicon and a window 14 is made connecting to the field oxide film. Then a source 16 and a drain 17 are formed by diffusing P covering a polysilicon 15, and a gate electrode 15 is patterned. A source 18 and a drain 19 of an ordinary FET are formed by diffusing from AsSG after removing the oxide film 13. The as does not cuase a short channel because of the short diffusion distance. The source and drain of FETA are exteded to the area right below the edge of the gate layer 20 by P over the entire surface which prevents an usual off-set. After this Al-Si 22 is formed on the opening of the oxide film 21 as usual and the device is completed with a protective film 23 and electrodes take-out pads and others. This construction makes an IC having superb protective property of input and output.

Semiconductor device with input and output protective circuit and its manufacturing method

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Semiconductor device with input and output protective circuit and its manufacturing method