Electrochemical energy storage is a current research area to address energy challenges of the modern world. The Cu2FeSnS4/PVP/rGO-decorated nanocomposite using PVP as the surface ligand was explored in a simple one-step solvothermal route, for studying their electrochemical behavior by designing asymmetric hybrid supercapacitor devices. The full cell three-electrode arrangements delivered 748 C/g (62.36 mA h/g) at 5 mV/s employing CV and 328 F/g (45.55 mA h/g) at 0.5 A/g employing GCD for the Cu2FeSnS4/PVP/rGO electrode. The half-cell two-electrode device can endow with 73 W h/kg and 749 W/kg at 1 A/g energy and power density. Furthermore, two Cu2FeSnS4/PVP/rGO//AC asymmetric devices connected in series for illuminating a commercial red LED more than 1 min were explored. This work focuses the potential use of transition-metal chalcogenide composite and introduces a new material for designing high-performance supercapacitor applications.

Quaternary Cu2FeSnS4/PVP/rGO Composite for Supercapacitor Applications.

Quaternary chalcogenide Cu2FeSnS4 (CFTS) thin layers have been grown by spray pyrolysis technique on glass substrates using different substrate temperatures (Ts = 160, 200, 240 and 280 °C). Physical properties of CFTS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS), spectrophotometer and Hall Effect. All results suggest that CFTS thin film synthesized at Ts = 240 °C has the best physical properties. XRD indicates an enhancement of crystalline quality of stannite CFTS elaborated at Ts = 240 °C with a maximum grain size about 45 nm and Raman spectroscopy confirms the purity phase of optimum sample. At Ts = 240 °C, atomic ratios of Cu/Fe/Sn/S were close to the theoretical ratios 2/1/1/4 and SEM images illustrates that the surface of the film is covered from a large number of micro-aggregates with spherical form. It is found that energy band gap and absorption coefficient values were about 1.46 eV and 9.8 104 cm−1 respectively at Ts = 240 °C. Hall Effect measurements revealed that electrical resistivity of optimum sample decreased to 0.18 Ωcm. Thus, all experimental results demonstrate that CFTS thin film grown at Ts = 240 °C can be considered as a promising absorber material in solar cell devices. A higher photodegradation rate of MB was about 81% under sun light for 4 h which indicates that optimum CFTS thin film grown at Ts = 240 °C would be a cheaper alternative catalyst to replace TiO2 in photocatalysis applications.

Effect of substrate temperature on physical properties of Cu2FeSnS4 thin films for photocatalysis applications

Quaternary semiconductor Cu2NiSnS4 (CNTS) has emerged as an ideal material for solar cells and has attracted the attention of researchers. Tetragonal-structured CNTS thin films have been successfully synthesized via sulfurization (500°C, argon + sulfur) of co-electrodeposited Cu-Sn-Ni-S precursors on molybdenum (Mo) substrate. The effects of the Ni2+ molarity on the deposition potential, structure, composition, morphology, and optical bandgap of the CNTS thin film were examined by using cyclic voltammetry, Raman spectroscopy, x-ray diffraction analysis, scanning electron microscopy (SEM), energy-dispersive x-ray (EDX) spectrometry, and ultraviolet–visible (UV–Vis) spectrophotometer. X-ray diffraction and Raman analyses confirmed formation of CNTS with tetragonal structure and average crystallite size of 17 nm to 20 nm. SEM revealed that the films were homogeneous, while EDX confirmed the presence of Cu-Ni-Sn-S, and the bandgap of the CNTS thin films was evaluated to lie in the range of 1.6 eV to 1.8 eV, making CNTS a strong candidate material for use in photovoltaic cells.

Synthesis of Tetragonal Cu 2 NiSnS 4 Thin Film via Low-Cost Electrodeposition Method: Effect of Ni 2+ Molarity

Structural, morphological and optical properties of Cu–Fe–Sn–S thin films prepared by electrodeposition at fixed applied potential

In this paper, earth-abundant and environmentally friendly kesterite Cu2ZnSnS4 (CZTS) thin films are successfully synthesized by electrodeposition on Indium Tin Oxide (ITO) coated glass for photovoltaic application. For the first time, the electrochemical nucleation and growth mechanisms of the kesterite electrodeposition are investigated. Here, the electrochemical growth mechanism is studied and the diffusion coefficient D is calculated for different applied potentials. Our findings show that kesterite deposition occurs through progressive nucleation followed by the limited growth of diffusion of 3D hemispheric islands. Furthermore, it has been proven that the type of nucleation and growth is not influenced by the applied potential. Scanning electron microscopy, X-ray diffraction and UV–vis are used to characterize the physicochemical properties of the prepared samples. The morphological and crystallographic investigations reveal a different morphology and structure of the CZTS film deposited at different potentials for different times. Among the samples studied, the CZTS thin film prepared at −1.1 V for 60 min offers the best properties with 2.4 µm thickness after annealing at 450 °C. 

Investigation of nucleation and growth mechanism of Cu2ZnSnS4 absorber layer electrodeposition on Indium Tin Oxide coated glass

Preparation and characterization of Cu2FeSnS4 thin films for solar cells via a co-electrodeposition method

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Preparation and characterization of Cu2FeSnS4 thin films for solar cells via a co-electrodeposition method