The invention achieves vehicular battery monitoring with a configuration that allows the number of wires to be reduced and may execute information transmission more satisfactorily. In this invention, a battery monitoring device (30) comprises: a detection unit (50) detecting at least either the voltage at a predetermined position of a battery (10) installed in a vehicle, or the temperature of the battery (10); and a wireless communication unit (60) wirelessly transmitting detection information indicating at least either the voltage or the temperature of the battery (10) based on the detection result from the detection unit (50), and performing the wireless transmission to at least a relay (90) provided with a function whereby information is relayed and wirelessly transmitted to a battery ECU (20) (external device).

Vehicular battery monitoring device and vehicular battery monitoring system

A processing method of a wafer is provided, and the workability is good and the formation of a deburring layer can be performed efficiently. The processing method of the wafer is a method of processing a wafer by using a polishing pad including two types of abrasive grains, such as abrasive grains for polishing and abrasive grains for deburring. The processing method of the wafer includes a polishing step (ST4), in which polishing is performed by abutting the polishing pad rotating at a predetermined speed against the wafer while supplying an alkaline polishing liquid to the wafer held on thechuck table rotated at the first rotation speed; and a deburring layer forming step (ST5), in which the state that the polishing pad rotating at a predetermined speed abuts against the wafer that is held on the chuck table is maintained, and after the polishing step (ST4), the chuck table continuously rotates at a second rotation speed lower than the first rotation speed, and a deburring layer isformed on the wafer while supplying a liquid that does not react with the wafer.

Processing method of a wafer

According to some aspects of the invention, auxiliary axis measurement systems for determining three-dimensional coordinates of an object are provided as shown and described herein. According to some aspects of the invention, methods for operating auxiliary axis measurement systems for determining three-dimensional coordinates of an object are provided as shown and described herein.

Coordinate measurement system with auxiliary axis

A workpiece evaluating method evaluates the gettering property of a device wafer having a plurality of devices formed on the front side of the wafer and having a gettering layer formed inside the wafer. The method includes the steps of applying excitation light for exciting a carrier to the wafer, applying microwaves to a light applied area where the excitation light is applied and also to an area other than the light applied area, measuring the intensity of the microwaves reflected from the light applied area and from the area other than the light applied area, subtracting the intensity of the microwaves reflected from the area other than the light applied area from the intensity of the microwaves reflected from the light applied area to thereby obtain a differential signal, and determining the gettering property of the gettering layer according to the intensity of the differential signal obtained above.

Method of evaluating workpiece

A wafer processing method for processing a wafer having, on a face side, a device formed in each of areas demarcated by a plurality of crossing projected cutting lines includes a holding step of holding the wafer on a chuck table with the face side exposed and a cutting step of cutting the wafer held on the chuck table along the projected cutting lines with a cutting blade. In the cutting step, cutting is carried out while cutting water with a low resistivity is supplied to the face side of the wafer and cutting water with a high resistivity is supplied to the cutting blade.

Wafer processing method and cutting apparatus

An evaluation method of a device wafer on which plural devices are formed on a front surface and inside which a gettering layer is formed is provided. In the evaluation method, electromagnetic waves are radiated toward a back surface of the device wafer and excitation light is radiated to generate excess carriers. Furthermore, the gettering capability of the gettering layer formed in the device wafer is determined based on the damping time of reflected electromagnetic waves.

Evaluation method of device wafer

Workpiece evaluating method

Es wird ein Evaluierungsverfahren eines Einrichtungswafers bereitgestellt, auf dem mehrere Einrichtungen auf einer Vorderflache ausgebildet sind, und in welchem eine Getterschicht ausgeformt ist. In dem Evaluierungsverfahren werden elektromagnetische Wellen in Richtung einer Ruckflache des Einrichtungswafers ausgestrahlt und ferner Anregungslicht ausgestrahlt, um Uberschusstrager zu erzeugen. Daruber hinaus wird die Getterfahigkeit der Getterschicht, welche in dem Einrichtungswafer ausgebildet ist, basierend auf der Abklingzeit von reflektierten elektromagnetischen Wellen bestimmt.

Evaluierungsverfahren für Einrichtungswafer

The present invention is to provide a method for evaluating gettering characteristics without contaminating a device wafer. The present invention relates to a method for evaluating a device wafer (11) which has a plurality of devices (19) formed on a surface (11a) and a gettering layer (23) formed therein. An electromagnetic wave (M1) and excited light (L) are simultaneously irradiated to the backside (11b) of the device wafer to generate excessive carriers. Based on an attenuation time of a reflected electromagnetic wave (M2), the gettering characteristics of the gettering layer formed on the device wafer is determined.

Method for evaluating device wafer

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