A structure of a solid-state image sensing device applicable to an HDVS is disclosed in which at least one of the transmission paths for the drive pulses used for driving vertical registers and horizontal registers can achieve reduced propagation delays and signal distortions of the drive pulses. In the first preferred embodiment, a control gate for controlling the transfer of signal charges between the horizontal registers is constituted by a first polycrystalline silicon layer, a metal wiring layer is formed and is connected to the first polycrystalline silicon layer via contact regions and transfer electrodes provided for driving the horizontal registers are constituted by second and third semiconductor layers placed between the first polycrystalline silicon layer and the metal wiring layer without contacting the contact regions. In the second preferred embodiment, the control gate is formed of a wiring layer placed above the semiconductor layers constituting the transfer electrodes of the horizontal registers. In the third preferred embodiment, shunt wiring films are formed independently on the transfer electrodes for the vertical registers of an image portion and on the transfer electrodes for those of a storage portion.

Structure of solid-state image sensing devices

A solid-state imaging device includes: a plurality of photoelectric conversion units arranged in rows and columns in a pixel region; a plurality of vertical transfer units arranged for corresponding columns of the photoelectric conversion units, and transfer, in a column direction, the signal charges read from the corresponding columns of the photoelectric conversion units; a first and a second horizontal transfer units arranged in parallel, and transfer, in a row direction, the signal charges transferred by the vertical transfer units; and a first and a second output units which (i) include floating diffusion units each formed in a region adjacent to an output end of a corresponding one of the first and the second horizontal transfer units and (ii) output, as electric signals, the transferred signal charges, wherein the floating diffusion units are disposed at greater intervals than adjacent ones of the horizontal transfer units.

Solid-state imaging device having floating diffusion units disposed at greater intervals than adjacent ones of horizontal transfer units

PURPOSE:To distribute signal charges controllably to CCD registers and therefore to prevent synchronous noises from generating by a method wherein plural registers are diversified in channel impurity concentration and moreover output sections are so formed as to be all equally high in channel impurity concentration. CONSTITUTION:Channel impurity concentration of a second horizontal CCD register 4B buried channel is so set as to be higher than that of a first horizontal CCD register 4A. Therefore, a substrate surface potential difference between the first and the second registers 4A and 4B occurs. Regions 8B, under the odd- numbered rows of vertical CCD registers which are under a transferring gate 5, are equal to the horizontal CCD registers 4B in impurity concentration, and act as a charges suction opening so as to transfer charges from the first horizontal CCD register 4A to the second horizontal CCD register 4B and regions 8A under even-numbered rows of vertical CCD registers are equal to the first horizontal CCD registers 4A channel in purity concentration. Thereby, a synchronous noises are prevented from generating.

Semiconductor device with charge transfer element

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Semiconductor device with charge transfer element