GJ Phelps
Newcastle University
13 Papers
41 Citations
GJ Phelps is an academic researcher from Newcastle University. The author has contributed to research in topics: Silicon carbide & Dopant. The author has an hindex of 5, co-authored 13 publications. Previous affiliations of GJ Phelps include University of Newcastle.
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Papers
Mechanical properties of a 3C-SiC film between room temperature and 600 °C
Michele Pozzi,Musaab Hassan,Alun Harris,Jim Burdess,Liudi Jiang,KK Lee,Rebecca Cheung,GJ Phelps,Nicholas G. Wright,Christian A. Zorman,Mehran Mehregany +10 more
TL;DR: In this paper, a cubic poly-SiC film was used to construct cantilevers and bridges between room temperature (RT) and 600 °C. The residual tensile stress is found to depend on temperature in a complex manner.
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Enhanced nitrogen diffusion in 4H-SiC
GJ Phelps,Nicholas G. Wright,E.G. Chester,Christopher Mark Johnson,Anthony O'Neill,S. Ortolland,Alton B. Horsfall,Konstantin Vassilevski,Russell M. Gwilliam,Paul G. Coleman,C. P. Burrows +10 more
TL;DR: In this article, the diffusion of boron enhanced diffusion of nitrogen (N) in ion-implanted 4H silicon carbide (4H-SiC) was investigated.
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Step bunching fabrication constraints in silicon carbide
TL;DR: In this paper, a newly observed surface morphological phenomenon (step bunch bleed) and its implications for device fabrication constraints in ion implanted 4H-silicon carbide (4H-SiC) are discussed.
11
Dopant ion implantation simulations in 4H-Silicon Carbide
TL;DR: In this paper, the results of typical ion implantation regimes using specific computer simulation tools are reviewed and the results from these implant profile simulation tools may be used as input data to further device simulation modelling.
10
Potential benefits of silicon carbide zener diodes used as components of intrinsically safe barriers
P. Lark,Konstantin Vassilevski,Irina P. Nikitina,GJ Phelps,Alton B. Horsfall,Nicolas G. Wright +5 more
TL;DR: In this article, low voltage SiC Zener diodes were fabricated and tested to evaluate potential benefits of their application as a component of intrinsically safe barriers, and they demonstrated mixed avalanche tunnel breakdown at reverse bias voltages of 23 V with positive temperature coefficients of breakdown voltage of about 0.4 mV/°C.
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