Gert J. Leusink
Tokyo Electron
127 Papers
944 Citations
Gert J. Leusink is an academic researcher from Tokyo Electron. The author has contributed to research in topics: Atomic layer deposition & Layer (electronics). The author has an hindex of 16, co-authored 116 publications. Previous affiliations of Gert J. Leusink include Delft University of Technology & Arizona State University.
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Papers
Patent
Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
Michael S. Ameen,Gert J. Leusink,Joseph T. Hillman +2 more
- 19 Aug 1997
TL;DR: In this paper, a method of using titanium chloride to etchback CVD-Ti on a patterned oxide wafer and the product formed by this process is described, where the titanium is deposited onto a wafer composed of a silicon base and a pattern oxide layer which exposes portions of the silicon.
137
Patent
Structures and techniques for atomic layer deposition
Shintaro Aoyama,Robert D. Clark,Steven Consiglio,Marinus Hopstaken,Hemanth Jagannathan,Paul C. Jamison,Gert J. Leusink,Barry P. Linder,Vijay Narayanan,C. S. Wajda +9 more
- 24 Sep 2010
TL;DR: In this article, a method for forming at least one first monolayer of first material on a surface of a substrate by performing a first plurality of cycles of atomic layer deposition, and then annealing the formed at least first monoline under a first inert atmosphere at a first temperature between about 650° C and about 900° C.
119
Growth kinetics and inhibition of growth of chemical vapor deposited thin tungsten films on silicon from tungsten hexafluoride
TL;DR: In this article, the growth kinetics and inhibition of growth of chemical vapor deposited thin W films on Si(100) from WF6 were studied with in situ growth stress and reflectivity measurements and ex situ weight gain measurements.
41
Patent
Method for characterizing the performance of an electrostatic chuck
Jozef Brcka,Bill Jones,Gert J. Leusink,Jeffrey J. Long,Bill Oliver,Charles Tweed +5 more
- 07 Aug 2001
TL;DR: In this paper, a method for characterizing the performance of an electrostatic chuck prior to installing the chuck in the vacuum chamber of a semiconductor processing system in a production line is presented.
40
Patent
Low-pressure deposition of metal layers from metal-carbonyl precursors
Hideaki Yamasaki,Tsukasa Matsuda,Atsushi Gomi,Tatsuo Hatano,Masahito Sugiura,Yumiko Kawano,Gert J. Leusink,Fenton R. McFeely,Sandra G. Malhotra +8 more
- 30 Sep 2003
TL;DR: In this article, a thermal chemical vapor deposition (TCVD) method was proposed for low-resistivity metal layers on semiconductor substrates by introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate.
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