Systems and methods for display control based on pupil size in virtual, augmented, and mixed reality (xR) applications. In some embodiments, a method may include: identifying, via a camera mounted to a body a headset facing an eye of a user wearing the headset, a pupil state of the user; communicating an indication of the pupil state to an Information Handling System (IHS) coupled to the headset, wherein the IHS is configured to select a setting based upon the pupil state and transmit an indication of the setting to the headset; and applying the setting, via a controller of the headset, to at least one of: (a) a display mounted on the body of the headset, or (b) an image shown to the user via the display.

Headset display control based upon a user's pupil state

Zur Bestimmung einer optischen Phasendifferenz (φabs, - φML|) von Messlicht (1i, 1j) einer Messlichtwellenlange uber eine Flache eines strukturierten Objekts (8) wird folgender Masen vorgegangen: Zunachst wird eine Serie von 2D-Bildern des Objekts (8) jeweils in verschiedenen Fokalebenen gemessen, zur Aufnahme eines 3D-Luftbildes des Objekts (8). Anschliesend wird aus dem 3D-Luftbild eine bildseitige Feldverteilung einschlieslich Amplitude und Phase eines elektrischen Feldes des 3D-Luftbildes rekonstruiert. Sodann wird die Phasendifferenz (|φabs- φML|) aus der rekonstruierten Feldverteilung mit Hilfe einer Phasenkalibrierung bestimmt. Die Phasendifferenz (|φabs- φML|) ist dabei die Differenz zwischen einer Absorberstrukturphase φabsdes Messlichts 1i, welches von Absorberstrukturen (9) des Objekts (8) reflektiert wird, und einer Reflektorstrukturphase φMLdes Messlichts (1j), welches von Reflektorstrukturen (10) des Objekts (8) reflektiert wird. Die Phasendifferenz (|φabs- φML|) wird dabei als insgesamt uber eine zu vermessende Objektstruktur geltende Kenngrose bestimmt. Zur Durchfuhrung dieses Bestimmungsverfahrens wird ein Metrologiesystem mit einem optischen Messsystem herangezogen. Es resultiert ein Phasendifferenz-Bestimmungsverfahren, welches zu gut nutzbaren Werten bei der Optimierung eines Bildkontrastes bei einer Nutzung des strukturierten Objekts als Reflexions-Lithographiemaske fuhrt.

Verfahren zur Bestimmung einer optischen Phasendifferenz von Messlicht einer Messlichtwellenlänge über eine Fläche eines strukturierten Objektes

Methods and systems for more efficient X-Ray scatterometry measurements of on-device structures are presented herein. X-Ray scatterometry measurements of one or more structures over a measurement area includes a decomposition of the one or more structures into a plurality of sub-structures, a decomposition of the measurement area into a plurality of sub-areas, or both. The decomposed structures, measurement areas, or both, are independently simulated. The scattering contributions of each of the independently simulated decomposed structures are combined to simulate the actual scattering of the measured structures within the measurement area. In a further aspect, measured intensities and modelled intensities including one or more incidental structures are employed to perform measurement of structures of interest. In other further aspects, measurement decomposition is employed to train a measurement model and to optimize a measurement recipe for a particular measurement application.

On-device metrology using target decomposition

A method of operating a multi-column electron beam array for quality inspection of a semiconductor wafer involves dividing the whole wafer area collectively in equally divided areas allocated to each column of the array, and assigning each of the areas as a column working space having the same dimensions and orientations. The array of column working spaces are assigned to an array of column optical axes, wherein a field of view of each column is defined as a covered region in which critical wafer patterns can be scanned by one or more columns to take an image. The stage supporting the wafer is moved such that each column working space is fully covered by the field of view of each column completely. By utilizing arbitrary waveform generators in electron inspection columns, this method also can be extended to write independent arbitrary patterns in predetermined positions in each die on a wafer.

Methods for inspection sampling on full patterned wafer using multiple scanning electron beam column array

Systems and methods for evaluating critical dimensions of a semiconductor device are provided. An exemplary system includes at least one processor and at least one memory storing instructions. The instructions, when executed by the at least one processor, cause the at least one processor to perform operations. The operations include receiving information of a first set of overlay markings on a first layer of the semiconductor device and information of a second set of overlay markings on a second layer of the semiconductor device. The first layer is lower than the second layer. The operations also include receiving a plurality of diffraction parameters measured from corresponding overlay markings on the first and second layers. The operations further include determining a variation of the critical dimensions on the second layer based on the plurality of diffraction parameters.

Systems and methods for evaluating critical dimensions based on diffraction-based overlay metrology

A reticle is inspected with an imaging system to obtain a measured image of a structure on the reticle, and the structure has an unknown critical dimension (CD). Using a model, a calculated image is generated using a design database that describes a pattern used to form the structure on the reticle. The model generates the calculated image based on: optical properties of reticle materials of the structure, a computational model of the imaging system, and an adjustable CD. A norm of a difference between the measured and calculated images is minimized by adjusting the adjustable CD and iteratively repeating the operation of generating a calculated image so as to obtain a final CD for the unknown CD of the structure. Minimizing the norm of the difference is performed simultaneously with respect to the adjustable CD and one or more uncertain parameters of the imaging system.

Techniques and systems for model-based critical dimension measurements

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Techniques and systems for model-based critical dimension measurements