Recent developments on the optical properties of thin films of chalcogenide glasses

Chalcogenide thin films have been investigated and explored in the last several decades to widen their use in optical, electronic, and optoelectronic device sectors. The phenomenon corresponding to different induced stimuli effects, doping foreign elements is the most productive and efficient way to improve their structural ability, optical characteristics, and electronic approaches. Based on that, metal doping has an enormous impact on the aspects and understanding of the mechanism inside the matrix. This review is mainly based on metal-doped chalcogenide thin films, their effect on various properties of the host materials, and several applications based on that. Thin films doped primarily with bismuth (Bi), antimony (Sb), silver (Ag), tin (Sn), and copper (Cu) were analyzed and discussed. Progress in understanding their structure, bonding, and properties within the matrix was also discussed. This paper also describes the importance and developments of these metal-doped thin films, their physicochemical aspects, and their applications in optoelectronic devices. Different potential applications of these metal-doped chalcogenide thin films in manufacturing technology-based optoelectronic devices, namely sensors, waveguides, switching devices, batteries, optical memories, etc., are also highlighted.

/pdf/a-review-on-metal-doped-chalcogenide-films-and-their-effect-3cj1gyy3.pdf

A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

Origin of near to middle infrared luminescence and energy transfer process of Er 3+ /Yb 3+ co-doped fluorotellurite glasses under different excitations

/pdf/origin-of-near-to-middle-infrared-luminescence-and-energy-3y5ooz6ulk.pdf

Linear and nonlinear optical properties of GeSe2-xSnx (0 ≤ x ≤ 0.8) thin films for optoelectronic applications

Optical and spectroscopic study of erbium doped calcium borotellurite glasses

This study reports on the synthesis of tellurium-based glasses that have a wide transmission far beyond the second atmospheric window. Several far-infrared(IR) transmitting glass systems including Ge-In-Te, Ge-Ga-Te, as well as some compositions containing alkali halides (KI, CsI) or metal halides (PbI2, CuI, AgI, CdI2 or ZnI2) are reported. Their glass-forming ability, thermal stability, and IR transmitting property are investigated. The results show that the broad absorption peak in the 15–20 μm disappear in the Fourier-transform infrared (spectrometer) spectra when gallium is replaced by indium. Te-based chalcogenide glasses containing metal-halides show superior glass-forming ability and better thermal stability than those containing alkali halides. Among these glasses, the ΔT of glass composition 65GeTe4-17In2Te6-18AgI can be as great as 115 °C. In ternary system, the glass composition Ge16Te69(AgI)15 (ΔT = 120 °C) is stable enough toward crystallization in combination with broad transmission region ...

New far-infrared transmitting Te-based chalcogenide glasses

Effect of Ce3+(Eu3+) codoping on the spectroscopic properties of Er3+ in bismuth-germanate glass

Enhanced 1.53 μm radiative transition in Er3+/Ce3+ co-doped tellurite glass modified by B2O3 oxide

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb–Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10−18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10−10 m/W. These excellent properties indicate that Sb-doped Ge–Se films have a good prospect in the applications of nonlinear optical devices.

http://iopscience.iop.org/article/10.1088/1674-1056/24/6/066801/pdf

Linear and nonlinear optical properties of Sb-doped GeSe 2 thin films

Effect of hydroxyl groups on Er3+-doped bismuth-borate glass and fiber

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