5 Papers
26 Citations
F. Cauwet is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Vapor–liquid–solid method & Epitaxy. The author has an hindex of 3, co-authored 5 publications.
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Papers
Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition
Maher Soueidan,Maher Soueidan,Gabriel Ferro,Bilal Nsouli,F. Cauwet,J. Dazord,Ghassan Younes,Yves Monteil +7 more
TL;DR: In this paper, homoepitaxial 3C-SiC polytype was detected and always together with the formation of double positioning boundaries whose density was found to depend on the growth conditions but not on the initial surface reconstruction.
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Synthesis of Silicon Carbide Nanowires from a Mixture of CaCO3 and Si Powders
Mikhael Bechelany,David Cornu,F. Chassagneux,Samuel Bernard,F. Cauwet,Laurent Mollet,Philippe Miele +6 more
- 25 Apr 2012
TL;DR: In this paper, a mixture of Si and CaCO 3 powders were heated up to 1200°C under static vacuum and the resulting product was analyzed by the means of SEM, HRTEM, electron diffraction and EDX spectroscopy.
•Journal Article
Synthesis of silicon carbide nanowires from a mixture of CaCO3 and Si powders
Mikhael Bechelany,David Cornu,F. Chassagneux,Samuel Bernard,F. Cauwet,Laurent Mollet,Philippe Miele +6 more
TL;DR: In this paper, a mixture of Si and CaCO 3 powders were heated up to 1200°C under static vacuum and the resulting product was analyzed by the means of SEM, HRTEM, electron diffraction and EDX spectroscopy.
Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate
Kassem Alassaad,Marilena Vivona,Veronique Soulière,Beatrice Doisneau,F. Cauwet,Didier Chaussende,Filippo Giannazzo,Fabrizio Roccaforte,Gabriel Ferro +8 more
TL;DR: In this article, the effect of adding GeH4 during 3C-SiC heteroepitaxial growth on low off-axis 4HSiC substrate using chemical vapor deposition technique is reported.
Low-temperature homoepitaxial growth of α-SiC on on-axis (0 0 0 1) substrate by vapor–liquid–solid mechanism
Maher Soueidan,Maher Soueidan,Gabriel Ferro,Bilal Nsouli,F. Cauwet,L. Mollet,Christophe Jacquier,Ghassan Younes,Yves Monteil +8 more
TL;DR: In this article, homoepitaxial growth was demonstrated on both polytypes down to 1100°C, which is the lowest temperature ever reported for growing epitaxial SiC layers on low tilt angle SiC substrates.