D. Soler
University of Barcelona
24 Papers
190 Citations
D. Soler is an academic researcher from University of Barcelona. The author has contributed to research in topics: Silicon & Nanocrystalline silicon. The author has an hindex of 9, co-authored 24 publications.
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Papers
PEN as substrate for new solar cell technologies
TL;DR: In this paper, the possible use of polyethylene naphthalate as a substrate for low-temperature deposited solar cells has been studied, and reflector structures have been built depositing Ag and ZnO:Al on top of the stamped polymer.
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Optimisation of doped microcrystalline silicon films deposited at very low temperatures by hot-wire CVD
TL;DR: In this article, the authors present new results on doped μc-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275°C), where doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition.
Stability of hydrogenated nanocrystalline silicon thin-film transistors
Albert Orpella,Cristobal Voz,Joaquim Puigdollers,D Dosev,M. Fonrodona,D. Soler,Joan Bertomeu,José Miguel Asensi,Jordi Andreu,Ramon Alcubilla +9 more
TL;DR: In this article, hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 A/s).
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Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD
TL;DR: The use of a tantalum wire in hot-wire chemical vapour deposition (HWCVD) has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550 °C) as mentioned in this paper.
Low temperature amorphous and nanocrystralline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
M. Fonrodona,D. Soler,J. Escarré,F. Villar,Joan Bertomeu,Jordi Andreu,Amar Saboundji,Nathalie Coulon,Tayeb Mohammed-Brahim +8 more
- 23 Aug 2004
TL;DR: In this paper, amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2.
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