The surface-emitting laser (SEL) is considered one of the most important devices for optical interconnects and LANs, enabling ultra parallel information transmission in lightwave and computer systems. We introduce its history, fabrication technology, and discuss the advantages. Then, we review the progress of the surface emitting laser and the vertical-cavity surface-emitting laser (VCSEL), covering the spectral band from infrared to ultraviolet by featuring its physics, materials, fabrication technology, and performances, such as threshold, output powers, polarizations, line-width, modulation, reliability, and so on.

Surface-emitting laser-its birth and generation of new optoelectronics field

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

Vertical-Cavity Surface-Emitting Lasers

We analyze the threshold properties of small area selectively oxidized vertical cavity lasers. Agreement for threshold gain versus laser size is found using the experimental intrinsic threshold voltage matched with a gain theory, as compared to a two-dimensional optical cavity simulation. Our analysis indicates the increasing threshold current density of small area lasers arises from both increasing threshold gain and the concomitant increasing leakage current. We further show that the optical loss can be reduced for lasers with areas as small as 0.25 μm2 while maintaining sufficient transverse optical confinement by displacing the apertures longitudinally away from the cavity and reducing the oxide thickness.

Scalability of small-aperture selectively oxidized vertical cavity lasers

Calculations show that significant optical scattering loss persists as standard quarter-wave (800 /spl Aring/) thick, dielectrically apertured vertical cavity laser diameters are reduced below 4 /spl mu/m and that thinner apertures can reduce the scattering loss, By using a thin (300 /spl Aring/) AlAs-oxide defined aperture, optical scattering loss has been dramatically reduced over the quarter-wave AlAs-oxide defined vertical-cavity laser. The optical loss reduction results in 2.3 /spl mu/m diameter lasers with differential efficiencies of 0.43 (80% of the value of broad-area lasers) and continuous-wave single-mode powers of 1.2 mW.

Reduced optical scattering loss in vertical-cavity lasers using a thin (300 /spl Aring/) oxide aperture

A fabrication process for laterally index-confined planar microcavity lasers is given that results in continuous-wave thresholds as low as 59 /spl mu/A for a properly tuned cavity (T=250 K). Characterization of the spontaneous emission mode shows that the lateral confinement, when reduced to the mode size expected for the planar cavity, appears to increase the spontaneous emission coupling to the lasing mode. >

Very-low-threshold index-confined planar microcavity lasers

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Very-low-threshold index-confined planar microcavity lasers