A DT-STAR material laser cutting lens etchant and a use method therefor. In terms of parts by weight, the etchant comprises 30-35 parts of a sulfuric acid solution, 10-12 parts of a hydrofluoric acid solution, and 55-60 parts of water. A chemically-strengthened glass product prepared and produced using the etchant is stable in terms of quality, has no large area of pitting and scratches on the surface and a 0% defective rate, is simple to prepare, and obviates the need for a polishing treatment.

Dt-star material laser cutting lens etchant and use method therefor

The invention belongs to the technical field of chemical preparations, and relates to a glass thinning liquid, which comprises 10-20wt% of hydrofluoric acid, 5-15wt% of nitric acid, 5-10wt% of sulfuric acid, 01-1wt% of a hydrofluoric acid stabilizer, 001-01 wt% of a surfactant and the balance of deionized water, wherein the surfactant is a trisiloxane surfactant According to the glass thinningliquid, the glass etching rate is increased through the surfactant with better acid resistance, the relatively high etching rate can be kept after 4 hours, and the etching precision can be ensured

Glass thinning liquid

The invention discloses a TFT-LCD aluminum etching liquid formula. The TFT-LCD aluminum etching liquid formula is characterized by comprising, by weight, 60-70 parts of inorganic acid, 5-10 parts of inorganic strong acid, 10-15 parts of a modifier, 0.1-1 part of a corrosion inhibitor and 0.1-1 part of a complexing agent. The TFT-LCD aluminum etching liquid formula has the beneficial effects that the novel amide type complexing agent is added in etching liquid, aluminum ion compounds on the surface achieve orderly complexing and can be easily flushed away from the surface when etching is conducted, and the rate of defective products is decreased to 2%-3% from 5%; and in addition, the hydroxy phosphate corrosion inhibitor is added, therefore, lateral corrosion is reduced, and lateral corrosion is reduced to 120-150 nm from 200 nm.

TFT-LCD aluminum etching liquid

The invention discloses a semiconductor advanced seal test TI etching liquid formula. The semiconductor advanced seal test TI etching liquid formula is characterized by comprising, by weight, 20-30 parts of inorganic compounds, 1-5 parts of buffering liquid, 1-5 parts of a surface treatment agent, 10-20 parts of a strong oxidant, 0.1-1 part of a corrosion inhibitor, 0.1-1 part of a stabilizer, 0.0001-10 parts of a complexing additive and 100-200 parts of ultra-pure water. The semiconductor advanced seal test TI etching liquid formula has the beneficial effects that the surface etched through the product is bright, surface roughness Ra value is 0.35-0.45, the surface difference degree is smaller than or equal to 10%, all properties of imported etching liquid are achieved, and the product production cost is low.

Semiconductor advanced seal test TI etching liquid

The invention discloses an etching solution for etching an indium tin oxide semiconductor transparent conductive film, wherein the etching solution comprises the components in parts by weight: 5-12 parts of hydrochloric acid, 25-30 parts of ferric trichloride, 05-1 part of a surfactant, 05-1 part of a defoaming agent and 100-300 parts of deionized water The etching solution has the beneficial effects that the alkyl polyglycoside surfactant has the advantages of low surface tension, no cloud point, strong wetting power, strong compatibility, no toxicity, no harm, no irritation to skin, and rapid and thorough biodegradation, the surface tension of the ITO etching solution is effectively reduced, and the etching speed is moderate in the etching process; the defoaming agent can eliminate foam generated by alkyl polyglycoside surfactants in the etching process, the high-precision processing requirement of ITO film etching is met, the photoresist is not damaged, etching lines are well protected, patterns are complete, etching is thorough within 1 min at the temperature of 25 DEG C, the etching effect is stable, and the repeatability is good

Etching solution for etching indium tin oxide semiconductor transparent conductive film

The invention discloses an automobile leather flame retardant formula which is characterized by comprising the following components in parts by weight: 5-15 parts of 4-Biphenylol diphenyl phosphate, 10-15 parts of an active agent, 1-5 parts of an emulsifier, 1-5 parts of a solvent, 1-5 parts of a penetrating agent, 0.1-1 part of a stabilizer, 2-3 parts of a reinforcing agent, 2-3 parts of an antioxidant, 3-5 parts of a silicon synergist and 20-100 parts of water. The automobile leather flame retardant has the beneficial effects that the novel environment-friendly phosphorus flame retardant additive is particularly added, so that the flame retardant effect is improved by 30%, the ultra-high-speed constant-temperature emulsification technology is adopted, the stability of chemical liquid isimproved to one year from half a year, and the chemical liquid is finer and smoother and is nanoscale emulsion, so that the chemical liquid is combined with leather more softly.

Automobile leather flame retardant

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