From molecules to bismuth oxide-based materials: Potential homo- and heterometallic precursors and model compounds

Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

We have studied the leakage current conduction mechanism of pulsed-laser-deposited SrBi2Nb2O9 (SBN) thin films on platinized silicon substrates. The time-dependent dc leakage current densities of SBN thin films do not follow Curie–von Schweidler power law. Instead the contribution of conduction current is predominantly electronic. At lower fields, the leakage current follows the ohmic behavior, and it increases exponentially for higher fields. The leakage current density of the SBN thin films was studied at elevated temperatures, and the data were fitted with the Schottky emission model. The effective Richardson’s constant was calculated to be about 8.7×10−6 A/cm2 K2. The Schottky barrier height of the SBN thin films was estimated to be 1.37 eV.

Leakage current characteristics of laser-ablated SrBi2Nb2O9 thin films

A study on the dielectric and pyroelectric properties of nonmetallic, polycrystalline Y—Ba—Cu—O thin films was performed for a range of temperatures (170–360K) and frequencies (2 Hz—1kHz). The complex permittivity, as a function of frequency, relaxed according to a first-order Debye Model. This relaxation was shown to be thermally activated, with an activation energy equal to the activation energy for the dc conduction of the material. The behavior of the data indicates that the polarization source is localized carriers near the Fermi level. Pyroelectricity was measured over a temperature range of 170–290 K, showing a constant response over these temperatures. Moreover, the pyroelectric properties of YBCO exhibited a strong sensitivity to poling at elevated temperatures, with a dramatic increase in the magnitude of the response. The pyroelectric coefficient changed from p ≈ 400 nC/(cm2-K) for the unpoled case to p ≈ 20 μC/(cm2-K) after poling with 5000 V/cm for one hour at 320 K.

Dielectric and pyroelectric response in Nb/semiconducting Y—Ba—Cu—O/Nb structures

The ferroelectric properties and leakage current mechanisms of polycrystalline SrBi2(V0.1Nb0.9)2O9(SBVN) thin films, which were deposited on Pt∕SiO2∕n-Si substrate by rf-magnetron sputtering and then annealed at 700°C for 60min in air, were investigated. These SBVN films showed excellent ferroelectric properties in terms of a large remnant polarization (2Pr) of ∼25μC∕cm2(2Ec∼200kV∕cm), fatigue free characteristics up to ⩾108 switching cycles and a low current density of 10−8A∕cm2 at 100kV∕cm. X-ray diffraction and scanning electron microscope investigations indicate that the sputtered films exhibit a dense, well crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics obtained at the low processing temperature are attributed to the larger polarizability attained through increased rattling space in the distorted Nb(V)O6 of the perovskite block due to the partial substitution of Nb with smaller V ions. ...

Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)2O9 thin films

We have investigated the crystal structure and the ferroelectric properties of SrBi2Nb2O9 (SBN) thin films with YBa2Cu3O7−δ (YBCO) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBCO and SBN were prepared by dc and rf sputtering, respectively, on SrTiO3 substrates. In a second layout we used a semiconducting Nb doped (0.05 wt % Nb) SrTiO3 (N-STO) substrate as the bottom electrode. The crystal structure of the films was characterized by x-ray diffraction. Since the SBN films exhibit a perfect c-axis oriented growth without the (115) phase the hysteresis loop measurements do not indicate ferroelectric behavior of the SBN films. The diode with a N-STO bottom electrode reveals, for a positive and negative applied voltage, a depletion and accumulation of the carrier density, respectively. The time dependent polarization and depolarization current can be described by a power law (Curie-von Schweidler). The conductivity as a function of applied voltage can be explained by the Schottky e...

Structural and electrical characterization of SrBi2Nb2O9 thin films deposited on YBa2Cu3O7−δ and Nb doped SrTiO3

Josephson junctions and superconducting field effect transistors based on epitaxial bi2sr2can-1cuno2(n + 2) thin films

We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O7-d as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O7-d and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by x-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 \muC/cm. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate 3% contribution of irreversible domain wall motion to the total dielectric constant.

Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-d thin films

We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O \(_{7 - \delta }\) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O \(_{7 - \delta }\) and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm2. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate a 3% contribution of the irreversible domain wall motion to the total dielectric constant.

Ferroelectricity and structure of BaTiO3 grown on YBa2Cu3O7-δ thin films

YBa 2 Cu 3 O 7-δ /insulator/Au-heterostructures on SrTiO 3 or LaAlO 3 substrates were prepared to study the properties of the materials SrTiO 3 , BaTiO 3 and Ceo 2 . X-ray diffraction measurements in Bragg-Brentano geometry show c-axis-oriented growth for the superconductor and the insulators SrTiO 3 and CeO 2 . Typical values for the rocking curve width of the different insulating films are between 0.4° and 0.8°. The highest breakdown fields are measured for the insulator SrTiO 3 with +37.5 kV/mm and -8.8 kV/mm. The permittivity for CeO 2 is independent of applied field and only weakly temperature dependent. This is in contrast to the perovskite type insulators, where the permittivity depends on temperature and field. The measured real- and imaginary parts of the dielectric constant differ as a function of frequency (20 Hz - 1 MHz) from the bulk-materials for all three insulators. This behaviour can be explained with a resistance in series and a conductance parallel to the capacitance.

/pdf/preparation-characterisation-and-dielectric-properties-of-1tgqwf8u6z.pdf

Preparation, characterisation and dielectric properties of YBa2Cu3O7-δ/insulator-heterostructures

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