Arvind Shah
École Polytechnique Fédérale de Lausanne
48 Papers
645 Citations
Arvind Shah is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Silicon & Amorphous silicon. The author has an hindex of 26, co-authored 47 publications. Previous affiliations of Arvind Shah include University of Neuchâtel & Carl Zeiss AG.
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Papers
Photovoltaic Technology: The Case for Thin-Film Solar Cells
TL;DR: The advantages and limitations of photovoltaic solar modules for energy generation are reviewed with their operation principles and physical efficiency limits, and recent developments suggest that thin-film crystalline silicon (especially microcrystalline silicon) is becoming a prime candidate for future photov electricity generation.
Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior?
TL;DR: Voltage‐dependent spectral response measurements suggest that the carrier transport in complete μc‐Si:H p‐i‐n cells may possibly be cosupported by diffusion (in addition to drift), and first light‐soaking experiments indicate no degradation for the entirely μc •Si •H cells.
Material and solar cell research in microcrystalline silicon
Arvind Shah,Johannes Meier,Evelyne Vallat-Sauvain,Nicolas Wyrsch,Ulrich Kroll,C. Droz,U. Graf +6 more
TL;DR: In this paper, the authors describe the introduction of hydrogenated microcrystalline silicon (μc-Si:H) as novel absorber material for thin-film silicon solar cells.
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Efficiency limits for single-junction and tandem solar cells
TL;DR: In this article, basic limitations of single-junction and tandem p-n and p-i-n diodes are established from thermodynamic considerations on radiative recombination and semi-empirical considerations on the classical diode equations.
366
Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells: temperature-induced morphological changes
TL;DR: In this article, a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below the pressures usually applied for the deposition of this kind of material, is presented.
319