Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to estimate the device temperature in operation, typically assuming a constant thermal conductivity and/or heat capacity of the SiC material. Whether and by how much the accuracy of the resulting device temperature prediction under these assumptions is compromised has not been investigated so far. Focusing on high-temperature operating conditions as found under short circuit (SC), this paper presents a comprehensive analysis of thermal material properties determining the temperature distribution inside SiC power mosfet s. Using a calibrated technology computer-aided design (TCAD) electrothermal model, it is demonstrated that the temperature prediction of SiC power devices under SC operation when neglecting either the top metallization or the temperature dependence of the heat capacity is inaccurate by as high as 25%. The presented analysis enables to optimize compact electrothermal models in terms of accuracy and computational time, which can be used to assess the maximum temperature of SiC power mosfet s in both discrete packages and multichip power modules exposed to fast thermal transients. A one-dimensional thermal network of a SiC power mosfet is proposed based on the thermal material properties, the size of the active area of the device, and its thickness.

/pdf/accurate-temperature-estimation-of-sic-power-mosfet-s-under-4ozuatcq3d.pdf

Accurate Temperature Estimation of SiC Power mosfet s Under Extreme Operating Conditions

Silicon carbide (SiC) power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC devices can operate without a good cooling system. To demonstrate this, the model of a merged p-i-n Schottky (MPS) SiC diode is presented, and its parameters are identified with experimental measurements. This model is then used to study the ruggedness of the diode regarding the thermal runaway phenomenon. Finally, it is shown that, where a purely unipolar diode would be unstable, the MPS structure brings increased stability.

/pdf/thermal-stability-of-silicon-carbide-power-diodes-3gmf888dmn.pdf

Thermal Stability of Silicon Carbide Power Diodes

In this paper, the nonlinear compact thermal model of power semiconductor devices based on the Cauer network is proposed. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the selected metal-oxide-semiconductor (MOS) power transistor at its various cooling conditions.

Nonlinear Compact Thermal Model of Power Semiconductor Devices

A comprehensive approach to generation of electrothermal models of silicon carbide (SiC) power Schottky diodes is presented. Both the electrical and thermal parts of the model are behavioral. The electrical one was developed in order to accurately represent the nonlinear properties of SiC merged PiN Schottky (MPS) diodes. Its parameters are automatically obtained with a dedicated numerical procedure. The thermal model derivation differs from the earlier approaches because it is based on the analysis of thermal constant spectrum of the temperature response of a modeled device. Simple model generation and parameter extraction procedures are proposed in which no knowledge of technological data is necessary.

Behavioral Approach to SiC MPS Diode Electrothermal Model Generation

EHD gas pumping – A concise review of recent development

Unmanned aerial vehicles (UAVs) have been used extensively for search and rescue operations, surveillance, disaster monitoring, attacking terrorists, etc. due to their growing advantages of low-cost, high maneuverability, and easy deployability. This study proposes a mixed-integer programming model under a multi-objective optimization framework to design trajectories that enable a set of UAVs to execute surveillance tasks. The first objective maximizes the cumulative probability of target detection to aim for mission planning success. The second objective ensures minimization of cumulative path length to provide a higher resource utilization goal. A two-step variable neighborhood search (VNS) algorithm is offered, which addresses the combinatorial optimization issue for determining the near-optimal sequence for cell visiting to reach the target. Numerical experiments and simulation results are evaluated in numerous benchmark instances. Results demonstrate that the proposed approach can favorably support practical deployability purposes.

https://www.mdpi.com/2079-9292/10/10/1193/pdf

UAVs Path Planning under a Bi-Objective Optimization Framework for Smart Cities

The measurements of isothermal and non-isothermal DC characteristics of SiC Schottky barrier diodes are presented in this paper. Various electro-thermal models for I-V characteristics calculation are proposed. The calculations of non-isothermal characteristics of SiC SBD's in the wide range of forward voltage are shown. The self-heating phenomenon, as an electro thermal positive feedback is discussed. The critical current and junction temperature estimation for SiC SBD is explained.

The current-voltage characteristics of SiC Schottky barrier diodes with the self-heating included

The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper. The measurements of the diodes characteristics have been performed with the use of a pulse method, with fast registration of measurement points after the diode current turning on, or with the use of a fully static method, in which the self-heating phenomenon is taken into account. Apart from the measurements, the series of numerical experiments, giving the isothermal and non-isothermal characteristics as a result, were executed. The complex, accurate numerical procedures as well as simplified analytical calculations were implemented. A good conformity of all calculation and measurement results have been obtained. In the presented investigations, for relatively high currents and ambient temperatures, the influence of self-heating on the SiC Schottky diodes static characteristics is significant. The large (even 4 V for the ambient temperature 300◦C ) values of voltages corresponding to the nominal diode currents have been observed.

/pdf/dc-characteristics-of-the-sic-schottky-diodes-2fr0vrpl5j.pdf

DC characteristics of the SiC Schottky diodes

In the paper, the dynamic nonlinear model of SiC devices is proposed, where the dependencies of the thermal parameters on the temperature are included. The proposed model is applicable and useful in the simulations of electro-thermal transients in the devices working with high power density and in the wide range of temperature.

Nonlinear thermal characteristics of silicon carbide devices

The article deals with simulation tests on the reliability of the equipment of the wind farm WF in the operation process. The improvement, modernization, and introduction of new solutions that change the reliability, as well as the quality and conditions of use and operation of wind farm equipment, require testing. Based on these tests, it is possible to continuously evaluate the reliability of the equipment of WF. The issue of reliability assessment of wind farm equipment, for which intelligent systems, diagnostic systems DIAG, and Wind Power Plant Expert System (WPPES) are used to modernize the operation process, can only be tested in a simulative way. The topic of testing the reliability of complex technical objects is constantly developing in the literature. In this paper, it is assumed that the operation of wind farm equipment is described and modeled based on Markov processes. The adoption of this assumption justified the use of the Kolmogorov–Chapman equations to describe the developed model. Based on this equation, an analytically developed model of the wind farm operation process was described. The simulation analysis determines the reliability of the wind farm in terms of the availability factor Kg(t). The simulation tests are performed in two phases using the computer program LabView. In the first stage, the reliability value in the form of the readiness factor Kg(t) as a function of changes in the mean repair time value ranging {from 0.3 to 1.0} was investigated. In the second stage, the reliability value of WF devices was examined as a function of changes in the value of the average time between successive failures, ranging from 1000 to 3000 (h)}.

/pdf/assessment-of-the-reliability-of-wind-farm-devices-in-the-1rqyp5h4.pdf

Assessment of the Reliability of Wind Farm Devices in the Operation Process

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