An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A microelectronic package includes a microelectronic element having faces and contacts, the microelectronic element having an outer perimeter, and a substrate overlying and spaced from a first face of the microelectronic element, whereby an outer region of the substrate extends beyond the outer perimeter of the microelectronic element. The microelectronic package includes a plurality of etched conductive posts exposed at a surface of the substrate and being electrically interconnected with the microelectronic element, whereby at least one of the etched conductive posts is disposed in the outer region of the substrate. The package includes an encapsulating mold material in contact with the microelectronic element and overlying the outer region of the substrate, the encapsulating mold material extending outside of the etched conductive posts for defining an outermost edge of the microelectronic package.

Microelectronic packages and methods therefor

Packages for an integrated circuit die and methods and leadframes for making such packages are disclosed. The package includes a die, a die pad, peripheral metal contacts, bond wires, and an encapsulant. The die pad and contacts are located at a lower surface of the package. The die pad and the contacts have side surfaces which include reentrant portions and asperities to engage the encapsulant. A method of making a package includes providing a metal leadframe having a die pad in a rectangular frame. Tabs extend from the frame toward the die pad. The die pad and tabs have side surfaces with reentrant portions and asperities. A die is attached to the die pad. The die is electrically connected to the tabs. An encapsulant is applied to the upper and side surfaces of the leadframe. Finally, the leadframe is cut in situ so that the die pad and tabs are severed from the frame, the sides of the package are formed, and the package is severed from the leadframe.

Plastic integrated circuit package and method and leadframe for making the package

Micro lead frame (MLF)-type semiconductor packages that allow the semiconductor packages to be stacked on top of each other. One aspect of the semiconductor package includes a leadframe, a plurality of electrical connectors, a semiconductor chip, and a sealing material for encapsulating the above components. The leadframe has a plurality of leads, with each one of the plurality of leads running from the top of the semiconductor package to the bottom of the semiconductor package. Each one of the plurality of leads has a top portion protruding from the top surface of the semiconductor package and a bottom portion protruding from the bottom surface of the semiconductor package. The leads allow for electrical connection of a second semiconductor package placed on top of the first semiconductor package. Further, the protruding parts of the leads form a space between the stacked semiconductor packages for improved heat dissipation.

Stackable semiconductor package and method for manufacturing same

Printed circuit board

A semiconductor apparatus includes a semiconductor chip and a die pad on which the semiconductor chip is mounted. The die pad is provided thereon with an opening. The semiconductor chip and the die pad may be shaped to be similar figures of rectangle, and the opening may include a plurality of first slits which are arranged around the corners of the die pad, respectively.

Semiconductor apparatus and method for fabricating the same

A semiconductor device provided with one or more semiconductor pellets arranged on the bottom surface of a recess produced along a surface of a semiconductor plate having wirings arranged on the surface thereof, wirings extending toward the surface of the recess, and the recess being buried with a layer of a resin which is inclined to inflate, while it is hardened, resultantly producing a stress in the resin layer to expand toward the side wall of the recess engraved in the semiconductor plate, resultantly preventing breakage from happening for an interface between the side wall of the recess engraved in the semiconductor plate and the surface of the resin layer contacting the side wall, and remarkably improving the thermal conductivity efficiency to reduce the magnitude of a temperature rise of the semiconductor device, resultantly preventing a delay from happening for the operation speed of the semiconductor device.

Semiconductor device in a recess of a semiconductor plate

A semiconductor pullet 1 includes an integrated circuit formed in the central area of the pellet 1 , first electric pads 2 arranged in a line in the peripheral area and second electric pads 3 connected to the conductive lines 4 each of which has a second width L. The first pad 2 has a first width S 1 and arranged with a first interval P. The second pads 3 have a third width S 2 and are located outside of the first pads 2 in a parallel line to the line of said first pads with a second interval C. The first, second and third widths S 1 , L, S 2 and the first interval P has the relationship P>S 2 >S 1 +L. Each of the second pads 3 are located at the positions corresponding to the middle positions between the first pads 2 adjoining each other where the second pads 3 are located in a first area (region A) which is inside of straight lines from a center of the semiconductor pellet having an angle θ with a side of the semiconductor pellet 1 , in which θ>tan −1 (2C/(P−S 1 )). Further, each of the second pads 3 are located at the positions shifting in a direction towards a corner of the semiconductor pellet 1 from the middle positions where the second pads 3 are located in a second area (region B) which is outside of the first area (region A).

Semiconductor device having pads, the intervals of which are adjusted and arranged in semiconductor chip corners

A cross substrate and a method of mounting a semiconductor element are provided in which semiconductor elements can be mounted at a high density. Element side electrodes of a circuit forming surface of a semiconductor element and conductive filaments of a cross substrate are connected in a one-to-one correspondence by solder bumps. Thereafter, sealing is carried out by using a molten epoxy-based resin. In this way, a circuit forming surface side of the semiconductor element is sealed with sealing resin of the cross substrate, with the element side electrodes of the mounted semiconductor element electrically connected to conductive filaments which are wires of a cross substrate.

Cross substrate, method of mounting semiconductor element, and semiconductor device

This invention provides a resin-sealed type semiconductor device capable of decreasing a generation of a simultaneous switching noise even in using a further highly integrated semiconductor LSI More specifically, this invention provides a resin-type semiconductor device wherein a signal lead frame 105, a power supply lead frame 104 and a grand lead frame 103 are accumulated via an electric insulating layer between layers The power supply lead frame 104 and the grand lead frame 103 have a mesh shape with a plurality of openings in a plane electric conductor

Semiconductor device with staggered hexagonal electrodes and increased wiring width

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