The application of pulsed lasers to the study of Single-Event Effects (SEEs) in integrated circuits and devices is described. The role of a pulsed laser is to provide spatial and temporal information about SEEs, information that is not available when broad-beam ion sources are used. A detailed description is given of the mechanisms involved, including light propagation and absorption by both linear and non-linear processes. Numerous examples highlight the versatility and usefulness of the technique in the study of SEEs.

Pulsed-Laser Testing for Single-Event Effects Investigations

This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use these mappings in order to extract physical parameters, for instance sizes and shapes of the different sensitive areas of a component. These parameters can be used as input parameters for analytical or Monte Carlo calculation codes in order to predict the behaviour of sensitive components towards radiations.

Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code

Sets of image frames were captured from a CCD device exposed to continuous beams of high energy neutrons The tracks of short-range fragments from nuclear spallation interactions in the silicon of the device's pixels have been analyzed in respect of their frequency, intensity, directionality and other pertinent parameters A comparison between these results and the predictions of computer code models of nucleon interactions in silicon is presented Comparisons are also made with equivalent images of neutron events in an APS camera

Analyses of CCD images of nucleon-silicon interaction events

This paper reports on single-event upset (SEU) rate calculations using the GEANT4 code. Single event effect rate modeling can be performed using various approaches. In this paper, we propose to compare the standard rectangular parallepiped (RPP) cosmic ray effects in microelectronic code (CREME86) model with our direct Monte Carlo simulation using the GEANT 4 (radiation transport code developed by CERN) software. The results obtained on two device types are in good agreement with CREME86.

SEU rate calculation with GEANT4 (comparison with CREME 86)

This paper examines the performance of the Geant4 radiation transport toolkit for the simulation of energy deposition from proton- and neutron-nuclear interactions in silicon microelectronics. The results show that for large (/spl sim/300 /spl mu/m) to small (/spl sim/0.5 /spl mu/m) feature-size devices, the nucleon-nuclear and electromagnetic interaction models within the toolkit provide energy deposition spectra and single event upset rate predictions that are in good agreement with experimental data. The new Binary Cascade and Classical Cascade models, together with the nuclear pre-equilibrium model in Geant4, do not significantly differ in the results they produce. For small feature-size devices, it is shown that it is necessary to consider the effects of ionization by particles produced by nuclear interactions several micrometers above the sensitive volume.

Assessment of neutron- and proton-induced nuclear interaction and ionization models in Geant4 for Simulating single event effects

A new empirical methodology is defined and demonstrated in which the charge collection sensitivity profile of single-event effect (SEE)-susceptible nodes in microcircuits is calculated on the basis of laser pulse measurements of the upset threshold at a range of wavelengths.

Probing the charge-collection sensitivity profile using a picosecond pulsed laser at a range of wavelengths

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Probing the charge-collection sensitivity profile using a picosecond pulsed laser at a range of wavelengths