A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8V on a 50 Omega load was implemented in a SiGe BiCMOS process. It uses the BV-Doubler topology to achieve output swings twice the collector-emitter breakdown voltage without stressing any single transistor

/pdf/a-breakdown-voltage-multiplier-for-high-voltage-swing-tme2h605rw.pdf

A Breakdown Voltage Multiplier for High Voltage Swing Drivers

A novel intrinsic collector-base capacitance (C/sub CB/) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-/spl mu/m SiGe BiCMOS process could generate 9 V/sub PP/ differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V/sub PP/ in 0.18-/spl mu/m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported silicon-based drivers.

https://ir.nctu.edu.tw:443/bitstream/11536/12292/1/000237210500003.pdf

10-Gb/s modulator drivers with local feedback networks

The GigaBit Laser Driver (GBLD) is a key on-detector component of the GigaBit Transceiver (GBT) system at the transmitter side. As part of the design efforts towards the upgrade of the electrical components of the LHC experiments, a 10 Gb/s GBLD (GBLD10) has been developed in a 130 nm CMOS technology. The GBLD10 is based on the distributed-amplifier (DA) architecture and achieves data rates up to 10 Gb/s. It is capable of driving VCSELs with modulation currents up to 12 mA. Moreover, a pre-emphasis function has been included in the proposed laser driver in order to compensate for the capacitive load and channel losses.

https://iopscience.iop.org/article/10.1088/1748-0221/10/02/C02036/pdf

A 10 Gb/s laser driver in 130 nm CMOS technology for high energy physics applications

We have developed an ultra small 8ch variable optical attenuator multiplexer (V-AWG) with excellent optical performance using multi-chip planar lightwave circuit (PLC) technology The insertion loss is 50 dB for a flat-top spectrum and the polarization dependent loss (PDL) at 15 dB attenuation is 04 dB The module is 70 /spl times/ 45 /spl times/ 14 mm including the control board and this is 1/20 the size of a multi source agreement (MSA) type V-AWG Moreover, the total power consumption of this 8ch module is only 08 W

Ultra small and low power consumption 8ch variable optical attenuator multiplexer (V-AWG) using multi-chip PLC integration technology

A novel intrinsic collector-base capacitance (C CB ) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 μm SiGe BiCMOS process could output 9 V pp differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W.

Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

A series-connected voltage-balancing pulse driver employing direct-coupled current switch architecture with a high-driving-capability input buffer and 0.1 /spl mu/m InP HEMTs is presented. By connecting two HEMTs in series the driver can output 3.6 V/sub pp/ voltage swing. With the input buffer, the -3 dB limiting bandwidth of the driver increases from 11 to 30 GHz, and the rise and fall times decrease from 33 to 16 and from 37 to 16 ps, respectively. These short rise and fall times enable the driver to output clear 10 Gbit/s eye opening.

10 Gbit/s series-connected voltage-balancing pulse driver with high-speed input buffer

A series-connected voltage-balancing circuit can output more than twice the voltage amplitude that can be output by a single transistor. This circuit makes it possible to apply high-speed low-breakdown-voltage transistors to large-voltage-amplitude pulse drivers. The first operation of this type of driver at 10 Gbit/s is reported.

10 Gbit/s series-connected voltage-balancing pulse driver with direct-coupled current switches

A 10 Gbit/s cooled 1550 nm small form factor pluggable (XFP) optical transceiver for wavelength division multiplexing (WDM) application has been developed. New packaging technologies featuring a stacked-substrate layout allow one to add the LD temperature control function to the XFP transceivers. The developed transceivers meet the specifications of 10GBASE-ER/EW and OC-192 IR2/STM S-64.2b.

10 Gbit/s small form factor optical transceiver for 40 km WDM transmission

We describe an electronic dispersion compensator (EDC)-IC that consists of adaptive FFE with an integrated dispersion monitor, optimized for 10-Gb/s ODB transmission. The dispersion tolerance has been successfully enhanced, while simplified circuitry has enabled size reduction, low power consumption, and high controllability.

A 10-Gb/s Adaptive EDC-IC with integrated dispersion monitor for optical duobinary transmission

A three-level-control electronic dispersion compensation (EDC) technique using a simple eye monitor detecting the duty ratios of the received signal is proposed and demonstrated. The EDC prototype can compensate for the chromatic dispersion of 40 km singlemode fibre and realise a cost-effective 10 Gbit/s transceiver utilising a directly modulated laser diode for access networks.

Three-level-control EDC technique using simple eye monitor for access networks

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