New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I–V characteristics

Analytical and quasi-explicit four arbitrary point method for extraction of solar cell single-diode model parameters

Investigation of barrier inhomogeneities in Mo/4H-SiC Schottky diodes

A Schottky diode (SD) with Au/Pt/TiO2/Ti/Pt stacked structure were fabricated for its application to crossbar type resistive switching (RS) memory. The SDs showed a highly promising rectification ratio (∼2.4 × 106 @ ±2 V) between forward and reverse state currents and a high forward current density (∼3 × 105 A/cm2 @ 2 V), which is useful for highly integrated crossbar RS memory. The SD has local forward current conduction paths, which provides extremely scaled devices with an advantage. The minimization of interconnection line resistance is also important to provide sufficient current to achieve stable operation of RS memory.

Schottky diode with excellent performance for large integration density of crossbar resistive memory

In this article, a new method, based on the differential evolution (DE) of determining the Schottky-barrier height, ideality factor and series resistance of Schottky-barrier diode (SBD) model using forward current–voltage ( I – V ) characteristics, is discussed. For the DE method, initial guesses close to the solutions are not required. It can combat the parameter determination problem of the SBD model based on a very broad range specified for each parameter. The performance of the proposed DE method is compared with other commonly used model parameter determination technologies, including genetic algorithm (GA), simulated annealing algorithm (SA), Nelder–Mead simplex search method (SM) and least squares technique (LS). The comparative result indicates that the DE method can obtain optimum solutions more easily than others.

Parameter determination of Schottky-barrier diode model using differential evolution

An improved method based on a computer-aided curve fitting technique that uses vertical optimization for the simultaneous determination of various Schottky diode parameters ( I s , n , R s and G p ) from the I – V characteristics has been re-examined. In particular, it is shown that the inclusion of the effect of a shunt conductance in the analysis of transport properties allows the determination of more realistic values for the parameters of various quality diodes. The present method appears to be accurate even in the presence of noise and/or random errors during measurements.

Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method

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Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method