Topic
Wedge bonding
About: Wedge bonding is a research topic. Over the lifetime, 285 publications have been published within this topic receiving 2473 citations.
Papers published on a yearly basis
Papers
TL;DR: In this paper, a model was developed based on classical microslip theory to explain the general phenomena observed in the evolution of bond footprints left on the substrate, and it was shown that relative motion exists at the bonding interface as peripheral microslips at lower powers, transitioning into gross sliding at higher powers.
Abstract: The effects of the process parameters of ultrasonic power and normal bonding force on bond formation at ambient temperatures have been investigated with scanning electron microscopy (SEM) and energy-dispersive x-ray (EDX) analysis. A model was developed based on classical microslip theory1 to explain the general phenomena observed in the evolution of bond footprints left on the substrate. Modifications to the model are made due to the inherent differences in geometry between ball-bonding and wedge-bonding. Classical microslip theory describes circular contacts undergoing elastic deformation. It is shown in this work that a similar microslip phenomenon occurs for elliptical wire-to-flat contacts with plastically deformed wire. It is shown that relative motion exists at the bonding interface as peripheral microslip at lower powers, transitioning into gross sliding at higher powers. With increased normal bonding forces, the transition point into gross sliding occurs at higher ultrasonic bonding powers. These results indicate that the bonding mechanisms in aluminum wire wedge-bonding are very similar to those of gold ball-bonding, both on copper substrate. In ultrasonic wedge-bonding onto copper substrates, the ultrasonic energy is essential in forming bonding by creating relative interfacial motion, which removes the surface oxides.
83 citations
Patent•
9 Jun 1969TL;DR: In this paper, a method for bonding the ends of a thread-like wire lead to two spaced-apart regions of a semiconductive device or other electronic article is described.
Abstract: A bonding tool and method is disclosed for bonding the ends of a threadlike wire lead to two spaced-apart regions of a semiconductive device or other electronic article. One form of this invention includes a bonding tool having a tip for use with a reel of lead wire. The tip has an outwardly extending tapered groove on its working surface for producing an elongated wedgeshaped bond with the thinnest section of the wedge at the end of the bond adjacent to the reel. The unbonded wire adjacent the thinnest wedge section, extending from the source reel, is readily detached from the bonded portion with a light tug.
82 citations
Patent•
15 Mar 1982TL;DR: In this article, a method of making ultrasonic fine wire interconnections between pads on a semiconductor chip and lead out terminals which may be performed with commercially available computer controlled automatic wire bonding machines having an ultrasonic bonding tool holder is presented.
Abstract: The present invention teaches a novel method of making ultrasonic fine wire interconnections between pads on a semiconductor chip and lead out terminals which may be performed with commercially available computer controlled automatic wire bonding machines having an ultrasonic bonding tool holder. A capillary wedge bonding tool is employed which has an annular working face similar in cross-section to a conventional narrow face bonding wedge. When the second bond of an interconnecting wire is made, the capillary wedge bonding tool is moved away from the second bond to leave a small portion of the wire exposed out of the capillary wedge bonding tool. The wire is clamped and the bonding tool is then moved in a predetermined direction away from the second bond to break the wire and form a wire bonding tail. The predetermined direction of movement is at an angle which properly aligns the wire bonding tail in an angular direction under the annular working face of the capillary wedge bonding tool without the necessity of rotating the wedge bonding tool relative to the semiconductor chip.
74 citations
28 Sep 1999
TL;DR: In this article, a configuration for diode-based electrostatic discharge structures that can be reliably placed under the metal stack of an integrated circuit wire-bonding pad, thereby reducing the die area consumed for ESD was developed.
Abstract: We have developed a configuration for diode-based electrostatic discharge structures that can be reliably placed under the metal stack of an integrated circuit wire-bonding pad, thereby reducing the die area consumed for ESD. Prototype structures from both three- and four-level CMOS processes were assembled using gold ball and aluminum wedge bonding, respectively. Visual inspections after bonding found nothing that would compromise the integrity of the structure. Electrical tests found no failures from the ESD structure placement under the pad for over 8000 pads in the three-level metal and over 7000 pads for the four-level metal process. Structures under the pads pass full product-level qualification procedures.
64 citations
TL;DR: In this paper, a review of the state-of-the-art understanding of the wedge-wedge bonding mechanisms and its four phases is presented, including pre-deformation and activation of US vibration, friction, US softening and interdiffusion.
57 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2020 | 7 |
| 2019 | 7 |
| 2018 | 7 |
| 2017 | 7 |
| 2016 | 16 |
| 2015 | 8 |