Variable-range hopping

Abstract: Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2−200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.

Abstract: We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states in all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below ∼30 K, the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.

Abstract: Basic Elements of the Theory of Hopping Transport Small Polarons Hopping Conduction in Disordered Systems Classical Hopping Transport Recent Developments Appendix 1. Diagram Technique for Strong Electron-Phonon Coupling Appendix 2. Rate Equation in the Presence of a Magnetic Field Appendix 3. Percolation Problems and the Potts Model References.

Abstract: We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment and that long in situ annealing drastically improves the contact transparency, allowing four-terminal measurements to be performed and the pristine properties of the material to be recovered. Our devices show n-type behavior with a high room temperature on/off current ratio of similar to 10(6). They show clear metallic behavior at high charge carrier densities and mobilities as high as similar to 140 cm(2)/(V s) at low temperatures (above 300 cm(2)/(V s) in the case of bilayers). In the insulating regime, the devices exhibit variable range hopping, with a localization length of about 2 nm that starts to increase as the Fermi level enters the conduction band. The promising electronic properties of WS2, comparable to those of single layer MoS2 and WSe2, together with its strong spin-orbit coupling, make it interesting for future applications in electronic, optical, and valleytronic devices.