Vapor–liquid–solid method

Abstract: A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.

Abstract: Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

Abstract: nanoparticles in dimethylsulfoxide onto the PLL film for about 20 min, after which it was rinsed in dimethylsulfoxide and then dichloromethane. From the molecular weight, the average length of the PLL is about 30 nm. Therefore, each polymer can accommodate about seven or eight nanoparticles. [20] L. Clarke, M. N. Wybourne, M. Yan, S. X. Cai, J. F. W. Keana, Appl. Phys. Lett. 1997, 71, 617. [21] A. A. Middleton, N. S. Wingreen, Phys. Rev. Lett. 1993, 71, 3198. [22] G. Y. Hu, R. F. O'Connell, Phys. Rev. B 1994, 49, 16 773. [23] A. J. Rimberg, T. R. Ho, J. Clarke, Phys. Rev. Lett. 1995, 74, 4714. [24] L. Clarke, M. N. Wybourne, M. Yan, S. X. Cai, L. O. Brown, J. Hutchison, J. F. W. Keana, J. Vac. Sci. Technol. B 1997, 15, 2925. [25] The capacitance matrix was calculated for different chain lengths using the software package FastCap MIT (1992). We used the nanoparticle dimensions given in the text and a ligand shell dielectric constant of 3. For nanoclusters away from the end of the chains we obtain Cdd » 0.04 aF and Cg » 0.17 aF. As expected, the value of Cg is slightly larger than the value calculated for an isolated metal sphere of radius a coated with a dielectric shell, Cg» (4pee0a)/(1 + (a/d)(e±1)) = 0.14 aF, where d is the total radius of the core plus ligand shell. [26] Simulations were carried out using both MOSES (Monte-Carlo SingleElectronics Simulator, R. H. Chen) and SIMON (Simulation of Nano Structures, C. Wasshuber). [27] S. Chen, R. S. Ingram, M. J. Hostetler, J. J. Pietron, R. W. Murray, T. G. Schaaff, J. T. Khoury, M. M. Alvarez, R. L. Whetton, Science 1998, 280, 2098. [28] L. Y. Gorelik, A. Isacsson, M. V. Voinova, B. Kasemo, R. I. Shekhter, M. Jonson, Phys. Rev. Lett. 1998, 80, 4526. [29] O. D. Häberlen, S. C. Chung, M. Stener, N. Rösch, J. Chem. Phys. 1997, 106, 5189. [30] Y. Awakuni, J. H. Calderwood, J. Phys. D: Appl. Phys. 1972, 5, 1038. [31] G. Markovich, C. P. Collier, J. R. Heath, Phys. Rev. Lett. 1998, 80, 3807. [32] C. P. Collier, R. J. Saykally, J. J. Shiang, S. E. Hendrichs, J. R. Heath, Science 1997, 277, 1978. [33] N. Mott, Metal Insulator Transitions, Taylor and Francis, London 1990.

Abstract: This article surveys recent developments in the rational synthesis of single-crystalline zinc oxide nanowires and their unique optical properties. The growth of ZnO nanowires was carried out in a simple chemical vapor transport and condensation (CVTC) system. Based on our fundamental understanding of the vapor–liquid–solid (VLS) nanowire growth mechanism, different levels of growth controls (including positional, orientational, diameter, and density control) have been achieved. Power-dependent emission has been examined and lasing action was observed in these ZnO nanowires when the excitation intensity exceeds a threshold (∼40 kW cm–2). These short-wavelength nanolasers operate at room temperature and the areal density of these nanolasers on substrate readily reaches 1 × 1010 cm–2. The observation of lasing action in these nanowire arrays without any fabricated mirrors indicates these single-crystalline, well-facetted nanowires can function as self-contained optical resonance cavities. This argument is further supported by our recent near-field scanning optical microscopy (NSOM) studies on single nanowires.