Topic
Vanadium tetrachloride
About: Vanadium tetrachloride is a research topic. Over the lifetime, 123 publications have been published within this topic receiving 1396 citations.
Papers published on a yearly basis
1 / 2
Papers
TL;DR: In this article, thin films of the vanadium oxides, V2O5, VO2, VOx763, V6O13 were prepared on glass substrates by atmospheric pressure chemical vapour deposition (APCVD) of vanadium tetrachloride and water at 400-550 °C.
Abstract: Thin films of the vanadium oxides, V2O5, VO2, VOx
(x
= 2.00–2.50) and V6O13 were prepared on glass substrates by atmospheric pressure chemical vapour deposition (APCVD) of vanadium tetrachloride and water at 400–550 °C. The specific phase deposited was found to be dependent on the substrate temperature and the reagent concentrations. The films were characterised by Raman microscopy, X-ray diffraction (XRD), Rutherford backscattering (RBS), scanning electron microscopy (SEM), energy dispersive analysis by X-rays (EDX), reflectance/transmittance and UV absorption spectroscopy. The VO2 films show by Raman microscopy and reflectance/transmittance spectroscopy, reversible switching behaviour at 68 °C associated with a phase change from monoclinic (MoO2 structure) to tetragonal (TiO2, rutile structure).
243 citations
TL;DR: In this paper, the effect of the vanadium tetrachloride to water precursor ratio on the structural and morphological properties of thin films was investigated and the importance of achieving single phase of a particular oxidation state towards the improvement of the electrochemical performance of thin thin films grown by atmospheric pressure CVD was highlighted.
83 citations
68 citations
59 citations
TL;DR: In this paper, an inorganic vanadium tetrachloride (VCl4) was used as an ALD precursor for the first time to grow VO2 films.
Abstract: Vanadium dioxide (VO2) is a multifunctional material with semiconductor-to-metal transition (SMT) property. Organic vanadium compounds are usually employed as ALD precursors to grow VO2 films. However, the as-deposited films are reported to have amorphous structure with no significant SMT property, therefore a postannealing process is necessary for converting the amorphous VO2 to crystalline VO2. In this study, an inorganic vanadium tetrachloride (VCl4) is used as an ALD precursor for the first time to grow VO2 films. The VO2 film is directly crystallized and grown on the substrate without any postannealing process. The VO2 film displays significant SMT behavior, which is verified by temperature-dependent Raman spectrometer and four-point-probing system. The results demonstrate that the VCl4 is suitably employed as a new ALD precursor to grow crystallized VO2 films. It can be reasonably imagined that the VCl4 can also be used to grow various directly crystallized vanadium oxides by controlling the ALD-process parameters.
55 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2019 | 1 |
| 2018 | 3 |
| 2017 | 1 |
| 2016 | 3 |
| 2014 | 1 |
| 2013 | 2 |