Topic
Trisilane
About: Trisilane is a research topic. Over the lifetime, 266 publications have been published within this topic receiving 5790 citations.
Papers published on a yearly basis
Papers
Patent•
18 Jul 2003TL;DR: In this article, multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers, using trisilane as the silicon precursor.
Abstract: Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.
262 citations
Patent•
11 May 2007TL;DR: In this paper, a cyclical process of repeated blanket deposition and selective etching is used to selectively form epitaxial layers (125) in semiconductor windows, which are selectively formed by using a germanium catalyst during the etch phases of the process.
Abstract: Epitaxial layers (125) are selectively formed in semiconductor windows (114) by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material (120) over insulating regions (112), such as field oxide, and the selective etch phases preferentially remove non-epitaxial material (120) while deposited epitaxial material (125) builds up cycle-by-cycle. Quality of the epitaxial material (125) improves relative to selective processes where no deposition occurs on insulators (112). Use of a germanium catalyst during the etch phases of the process aids etch rates and facilitates economical maintenance of isothermal and/or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material (120) over the insulating regions (112) and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase.
232 citations
Patent•
6 Mar 2006TL;DR: In this article, a silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses, and a carbon precursor gas is also flowed into the reaction chamber during introduction of the trisileane and/or during introducing reactive nitrogen.
Abstract: A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.
220 citations
Patent•
29 Mar 2007TL;DR: In this article, a liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process, where the mixture is metered as a liquid and delivered to the injector where it is then vaporized and injected into the process chamber.
Abstract: A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
158 citations
TL;DR: A tin-seeded supercritical fluid-liquid-solid (SFLS) synthesis of silicon (Si) nanowires with trisilane reactant was developed.
Abstract: A tin (Sn)-seeded supercritical fluid–liquid–solid (SFLS) synthesis of silicon (Si) nanowires with trisilane reactant was developed. When used as anodes in lithium ion (Li-ion) batteries, films of the nanowires with poly(vinylidene) fluoride (PVdF) or sodium alginate (NaAlg) binder, carbon conductor, and fluoroethylene carbonate (FEC)-containing electrolyte gave reversible, high charge storage capacities of 1,800 mA h g–1. The nanowires also exhibited relatively good rate capability, with capacities of 400 mA h g–1 at the relatively fast cycling rates of 2C.
131 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2021 | 2 |
| 2020 | 4 |
| 2019 | 2 |
| 2018 | 4 |
| 2017 | 6 |
| 2016 | 5 |